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UMC United Micro Electronics

United Microelectronics Corp. engages in the semiconductor foundry business. It offers complementary metal-oxide semiconductor (CMOS) logic wafers, mixed signal wafers, radio frequency complementary metal-oxide semiconductor wafers, embedded memory products, high voltage integrated circuits (ICs), and complementary metal-oxide semiconductor image sensors. The company was founded on May 22, 1980 and is headquartered in Hsinchu, Taiwan.

Company profile

UMC stock data

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Calendar

28 Apr 20
12 Apr 21
31 Dec 21

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Patents

APP
Utility
Method of Fabricating a Flash Memory
25 Nov 20
A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.
APP
Utility
Manufacturing Method of Semiconductor Structure
25 Nov 20
A manufacturing method of the semiconductor structure including the following is provided.
APP
Utility
Metal Interconnect Structure and Method for Fabricating the Same
25 Nov 20
A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
APP
Utility
Structure of Memory Device and Fabrication Method Thereof
25 Nov 20
A structure of a memory device and a fabrication method thereof are provided.
APP
Utility
Semiconductor Device and Method for Fabricating the Same
25 Nov 20
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ.