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United Micro Electronics (UMC)

United Microelectronics Corp. engages in the semiconductor foundry business. It offers complementary metal-oxide semiconductor (CMOS) logic wafers, mixed signal wafers, radio frequency complementary metal-oxide semiconductor wafers, embedded memory products, high voltage integrated circuits (ICs), and complementary metal-oxide semiconductor image sensors. The company was founded on May 22, 1980 and is headquartered in Hsinchu, Taiwan.

UMC stock data

Calendar

28 Apr 22
12 Aug 22
31 Dec 22
Quarter (USD) Dec 21 Dec 20 Dec 19 Dec 18
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Annual (USD) Dec 21 Dec 20 Dec 19 Dec 18
Revenue
Cost of revenue
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Financial report summary

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Content analysis

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Positive
Negative
Uncertain
Constraining
Legalese
Litigous
Readability
8th grade Avg
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Proxies
No filings

Patents

Utility
Method of Fabricating a Flash Memory
25 Nov 20
A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.
Utility
Manufacturing Method of Semiconductor Structure
25 Nov 20
A manufacturing method of the semiconductor structure including the following is provided.
Utility
Metal Interconnect Structure and Method for Fabricating the Same
25 Nov 20
A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
Utility
Structure of Memory Device and Fabrication Method Thereof
25 Nov 20
A structure of a memory device and a fabrication method thereof are provided.
Utility
Semiconductor Device and Method for Fabricating the Same
25 Nov 20
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ.