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Fuji Electric (FELTY)

Company profile

Ticker
FELTY, FELTF
Exchange
Employees
Incorporated
Location
Fiscal year end
SEC CIK

Calendar

24 May 22
31 Mar 23

Financial report summary

?
Financial reports
No filings
Current reports
No filings
Proxies
No filings
Other
No filings

Patents

Utility
Alarm signal generator circuit and alarm signal generation method
17 May 22
With regard to an instrument wherein a plurality of phase operations are carried out, the type of failure or the phase in which the failure has occurred is determined and, in accordance with the result of the determination, an alarm signal is generated.
Utility
Semiconductor device test method
17 May 22
A method for testing a semiconductor chip that has a pn junction constituting a parasitic diode therein includes: causing probe terminals to be in contact with front surface electrodes of the semiconductor chip; obtaining a temperature of the semiconductor chip by measuring electrical characteristics of the parasitic diode through at least one of the front surface electrodes and a back surface electrode and by referring to prescribed temperature characteristics of the parasitic diode; if the obtained temperature is not within a prescribed tolerance from the predetermined target temperature, heating up the semiconductor chip by applying voltage between one or more of the front surface electrodes and the back surface electrode; and once the obtained temperature increases and reaches the predetermined target temperature within the prescribed tolerance, testing electrical characteristics of the semiconductor chip through the front surface electrodes and the back surface electrode.
Utility
Semiconductor module
17 May 22
A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends.
Utility
Semiconductor device and method of manufacturing semiconductor device
17 May 22
Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.
Utility
Reverse-conducting IGBT and manufacturing method thereof
17 May 22
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion.