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ARW Arrow Electronics

Arrow Electronics is an American Fortune 500 company headquartered in Centennial, Colorado. The company specializes in distribution and value added services relating to electronic components and computer products. The company ranked No. 110 in the 2019 Fortune 500 list of the largest United States corporations by total revenue. Arrow Electronics was founded in 1935 when a retail store named Arrow Radio opened on Cortlandt Street in the heart of lower Manhattan's "Radio Row," the birthplace of electronics distribution. Arrow Radio, established by Maurice Goldberg, sold used radios and radio parts to retail customers. Other industry pioneers with businesses nearby were Charles Avnet and Seymour Schweber.

ARW stock data

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Calendar

6 May 21
29 Jul 21
31 Dec 21
Quarter (USD)
Apr 21 Dec 20 Sep 20 Jun 20
Revenue
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Annual (USD)
Dec 20 Dec 19 Dec 18 Dec 17
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Financial data from company earnings reports.

Cash burn rate (estimated) Burn method: Change in cash Burn method: Operating income/loss Burn method: FCF (opex + capex)
Last Q Avg 4Q Last Q Avg 4Q Last Q Avg 4Q
Cash on hand (at last report) 227.7M 227.7M 227.7M 227.7M 227.7M 227.7M
Cash burn (monthly) 48.64M (positive/no burn) (positive/no burn) (positive/no burn) 1.51M (positive/no burn)
Cash used (since last report) 187.97M n/a n/a n/a 5.84M n/a
Cash remaining 39.74M n/a n/a n/a 221.86M n/a
Runway (months of cash) 0.8 n/a n/a n/a 146.7 n/a

Beta Read what these cash burn values mean

Date Owner Security Transaction Code Indirect 10b5-1 $Price #Shares $Value #Remaining
26 May 21 Kerin Andrew Charles Common Stock Sell Dispose S No No 122.28 7,348 898.51K 0
20 May 21 Michael J Long Common Stock Sell Dispose S No No 121.07 793 96.01K 126,033
20 May 21 Michael J Long Common Stock Sell Dispose S No No 120.58 54,845 6.61M 126,826
18 May 21 Melvin Vincent P Common Stock Sell Dispose S No No 120.02 7,368 884.31K 21,612
17 May 21 Kerins Sean J Common Stock Sell Dispose S Yes No 120.93 127.661 15.44K 0

Financial report summary

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Competition
Wayside TechnologyBSquareSynnexIHS Markit
Content analysis
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H.S. freshman Avg
New words: antitrust, component, favorable, ii, Krone, leverage, location, Norwegian, proportion, revenue, sequentially, single, spot, standard, warehouse
Removed: adjusting, aid, amortized, applied, applying, approach, ASU, banking, beginning, borrow, brought, Canadian, closure, collective, computer, confirmed, criteria, cumulative, curtailment, declared, deducted, degree, description, digital, discontinued, disposed, disposition, disrupt, disruption, Dollar, dramatic, earliest, economy, enacted, estimation, evaluated, exceeded, expediency, externally, Facilitation, factor, FASB, functionality, health, high, impaired, implement, implementation, improve, increasing, indirect, inflow, intended, judgment, July, jurisdiction, LIBOR, long, low, macroeconomic, maximize, meeting, methodology, mobility, model, modified, negative, network, occurred, optional, outbreak, overhead, party, past, payroll, perpetual, personal, plant, pool, present, property, prospective, public, recession, recognition, reducing, reference, reform, relevant, relief, relocation, reserve, response, restate, resulted, retained, retrospective, sensitive, softer, storage, Summary, supportable, test, topic, uncertainty, unemployment, unit, vary, volatility, vulnerable, website, weighted, widespread, wind, written

Patents

APP
Utility
Devices, Systems, and Methods for Distributed Game Architecture
17 Jun 21
Devices, systems, and methods of the present disclosure are directed to providing a Science, Technology, Engineering, and Mathematics (STEM) based distributed games that allows two or more teams of players to develop mathematical and problem-solving skills.
APP
Utility
Deep Ultraviolet Led and Method for Producing the Same
4 Feb 21
A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.
APP
Utility
Deep Ultraviolet Led and Method for Manufacturing the Same
30 Sep 20
Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ.
GRANT
Utility
Deep ultraviolet LED and method for manufacturing the same
8 Jun 20
Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ.