Loading...
Docoh

Tower Semiconductor (TSEM)

Tower Semiconductor Ltd., the leader in high-value analog semiconductor foundry solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor's focuses on creating positive and sustainable impact on the world through long term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, integrated power management (BCD and 700V), and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm) through TPSCo.

TSEM stock data

Calendar

29 Apr 22
2 Jul 22
31 Dec 22
Quarter (USD) Dec 21 Dec 20 Dec 19 Dec 18
Revenue
Cost of revenue
Operating income
Operating margin
Net income
Net profit margin
Cash on hand
Change in cash
Diluted EPS
Annual (USD) Dec 21 Dec 20 Dec 19 Dec 18
Revenue
Cost of revenue
Operating income
Operating margin
Net income
Net profit margin
Cash on hand
Change in cash
Diluted EPS
56.4% owned by funds/institutions
13F holders Current Prev Q Change
Total holders 178 156 +14.1%
Opened positions 67 27 +148.1%
Closed positions 45 10 +350.0%
Increased positions 42 57 -26.3%
Reduced positions 51 51
13F shares Current Prev Q Change
Total value 2.98B 2.66B +11.9%
Total shares 61.57M 59.36M +3.7%
Total puts 1.14M 1.2M -4.8%
Total calls 535.71K 997.09K -46.3%
Total put/call ratio 2.1 1.2 +77.3%
Largest owners Shares Value Change
Senvest Management 7.45M $360.42M -3.0%
Wellington Management 3.29M $159M -67.8%
Vanguard 3.24M $156.81M +2.1%
MCQEF Macquarie 3.06M $148.14M -0.4%
Clal Insurance Enterprises 2.18M $105.63M +82.1%
JPM JPMorgan Chase & Co. 2.02M $97.63M +389.8%
Alpine Associates Management 1.68M $81.31M NEW
Arp Americas 1.68M $81.11M NEW
Jennison Associates 1.63M $79.12M -7.4%
Sand Grove Capital Management 1.61M $77.86M NEW
Largest transactions Shares Bought/sold Change
Wellington Management 3.29M -6.91M -67.8%
PXGPE Phoenix 268.51K -1.93M -87.8%
Ion Asset Management 0 -1.9M EXIT
Alpine Associates Management 1.68M +1.68M NEW
Arp Americas 1.68M +1.68M NEW
Sand Grove Capital Management 1.61M +1.61M NEW
JPM JPMorgan Chase & Co. 2.02M +1.61M +389.8%
BEN Franklin Resources 1.55M +1.55M NEW
TIG Advisors 1.53M +1.53M NEW
Migdal Insurance & Financial 1.36M -1.12M -45.1%

Content analysis

?
Positive
Negative
Uncertain
Constraining
Legalese
Litigous
Readability
H.S. sophomore Avg
New words: Agrate, Antitrust, BOD, cent, Check, Clal, cleanroom, commingled, consortium, curb, Deed, delisted, diminution, discourage, EGM, enjoined, enjoining, expended, fraction, gap, Germany, Hart, HC, HSR, ID, incurrence, infected, injunction, issuable, Italian, Italy, lawsuit, mm, nearest, omitted, pendency, People, PSU, resource, restrained, restraining, Rodino, rounded, rounding, scenario, Scott, spread, succeeded, Taishin, timeframe, Trapped, TSIT, TSNB, unchanged, undertook, unexercised, unneeded, upside, waiting
Removed: amortization, Checkpoint, cont, designation, dilute, foregoing, linearly, mutual, Nanjing, nominal, Phoenix, preservation, representing, retained, Samsung, SMBC, SMTB, Sumitomo, Tacoma, Tohmatsu, Touche, uncertainty, update
Proxies
No filings

Patents

Utility
High resolution radiation sensor based on single polysilicon floating gate array
7 Jun 22
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Utility
Solid-state Imaging Apparatus
24 Feb 22
A solid-state imaging apparatus includes photoelectric conversion regions arranged close to a surface of a semiconductor substrate and a recessed portion provided above each photoelectric conversion region in the semiconductor substrate.
Utility
Solid-state Imaging Device
24 Feb 22
A solid-state imaging device includes a first semiconductor substrate, photoelectric conversion portions arrayed on the first semiconductor substrate and configured to convert incident light to charges, a charge storage portion configured to hold charges transferred from a corresponding one of the photoelectric conversion portions via a transfer transistor, and an interconnect layer stacked on the first semiconductor substrate and including a plurality of metal interconnects.
Utility
METHOD OF FORMING A GaN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA
24 Feb 22
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Utility
Ultraviolet Radiation Sensor
27 Jan 22
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.