TSEM Tower Semiconductor
Tower Semiconductor Ltd., the leader in high-value analog semiconductor foundry solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor's focuses on creating positive and sustainable impact on the world through long term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, integrated power management (BCD and 700V), and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm) through TPSCo.
Company profile
Ticker
TSEM
Exchange
Website
CEO
Russell Ellwanger
Employees
Incorporated
Location
Fiscal year end
Industry (SIC)
SEC CIK
Corporate docs
TSEM stock data
()
News
TSEM: Increased Capacity is Yielding Record Sales at Tower Semiconductor
13 May 21
Tower Semiconductor Beats On Q1 Revenue, Q2 Revenue Guidance Marginally Above Consensus
12 May 21
Tower Semiconductor Q1 Adj. EPS $0.31, Inline, Sales $347.21M Beat $345.20M Estimate
12 May 21
Earnings Scheduled For May 12, 2021
12 May 21
Press releases
STMicroelectronics brings Tower Semiconductor on board 300mm analog and power fab under construction in Italy
24 Jun 21
STMicroelectronics brings Tower Semiconductor on board 300mm analog and power fab under construction in Italy
24 Jun 21
Tower Semiconductor Ltd. to Host Earnings Call
12 May 21
Tower Semiconductor Reports First Quarter 2021 Double Digit Year over Year Revenue Growth
12 May 21
AIStorm's AI-in-Imager Solutions Use Tower Semiconductor's Hi-K VIA Capacitor Memory to Enable High Density Imager "Always On" Processing
6 May 21
Calendar
30 Apr 21
24 Jun 21
31 Dec 21
Financial summary
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Dec 20 | Dec 19 | Dec 18 | Dec 17 | |
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Annual (USD) |
Dec 20 | Dec 19 | Dec 18 | Dec 17 | |
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Financial data from company earnings reports.
Institutional ownership Q1 2021
Data for the last complete 13F reporting period. To see the most recent changes to ownership, click the ownership history button above.
54.6% owned by funds/institutions
13F holders |
Current |
|---|---|
| Total holders | 152 |
| Opened positions | 29 |
| Closed positions | 17 |
| Increased positions | 58 |
| Reduced positions | 48 |
13F shares |
Current |
|---|---|
| Total value | 1.65B |
| Total shares | 58.96M |
| Total puts | 1.35M |
| Total calls | 1.83M |
| Total put/call ratio | 0.7 |
Largest owners |
Shares | Value |
|---|---|---|
| Wellington Management | 9.39M | $263.25M |
| Senvest Management | 7.6M | $213.24M |
| MCQEF Macquarie | 3.18M | $89.23M |
| Vanguard | 2.97M | $83.33M |
| Migdal Insurance & Financial | 2.47M | $69.17M |
| Parsifal Capital Management | 2.19M | $61.39M |
| Vaughan Nelson Investment Management | 2.19M | $61.32M |
| Jennison Associates | 1.8M | $50.39M |
| D. E. Shaw & Co. | 1.55M | $43.49M |
| Harel Insurance Investments & Financial Services | 1.46M | $40.89M |
Financial report summary
?Content analysis
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| Positive | ||
| Negative | ||
| Uncertain | ||
| Constraining | ||
| Legalese | ||
| Litigous | ||
| Readability |
H.S. freshman Avg
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New words:
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Removed:
African, Alex, Angola, Annex, ATP, bad, basing, borrowed, Briefcam, Bucharest, Burundi, car, ceased, chart, clarified, collectability, collected, Commissioner, comparing, competitor, consolidating, consultant, copied, covering, cultural, defend, disaster, disclose, dispute, dissatisfaction, diversion, doubtful, economically, EDGAR, Edrei, electrically, Eligibility, eliminating, encounter, estimating, estimation, expensing, exposing, Fahn, Fellow, foreclose, Ginossar, Guzman, headquarter, heavily, hereof, HH, impair, impaired, implied, incurring, inspected, intent, interrupt, Itzhak, Joseph, judged, Kanne, Korea, Kornhauser, Leumi, list, mark, MIS, noncompliance, Numonyx, offsetting, oriented, PFIC, prospectively, Rami, Rdson, recession, reclassified, recover, refinance, repealed, reviewed, revocation, rift, Romania, RSU, ruling, Rwanda, satisfied, scrutiny, sea, semi, Similarly, spent, standby, Stanford, subsequent, substance, Sudan, suffice, supportable, supported, suspension, sustain, tabular, Tanzania, Thornton, Tigbur, TJT, Trump, twenty, Uganda, unavailable, unfavorable, unlimited, unplanned, Untied, urged, valley, varied, Washington, weather, Weighing, YCM, YuanChen, Zambia
Financial reports
20-F
2020 FY
Annual report (foreign)
30 Apr 21
20-F
2019 FY
Annual report (foreign)
30 Apr 20
20-F
2018 FY
Annual report (foreign)
25 Apr 19
20-F
2017 FY
Annual report (foreign)
29 Apr 18
20-F
2016 FY
Annual report (foreign)
9 Apr 17
20-F/A
2015 FY
Annual report (foreign) (amended)
29 Aug 16
20-F
2015 FY
Annual report (foreign)
10 May 16
20-F
2014 FY
Annual report (foreign)
13 May 15
20-F/A
2013 FY
Annual report (foreign) (amended)
16 Nov 14
20-F
2013 FY
Annual report (foreign)
13 May 14
Current reports
6-K
Current report (foreign)
15 Jun 21
6-K
Tower Semiconductor Reports First Quarter 2021
12 May 21
6-K
Current report (foreign)
6 May 21
6-K
Current report (foreign)
6 May 21
6-K
Current report (foreign)
4 May 21
6-K
Current report (foreign)
21 Apr 21
6-K
Current report (foreign)
17 Mar 21
6-K
Current report (foreign)
15 Mar 21
6-K
Current report (foreign)
9 Mar 21
6-K
Current report (foreign)
3 Mar 21
Registration and prospectus
S-8
Registration of securities for employees
13 May 15
F-X
Appointment of agent for service of process by issuers registering securities
10 Mar 15
F-3
Shelf registration (foreign)
10 Apr 14
D
$58.31M in equity / debt, sold $58.31M, 41 investors
8 Apr 14
424B5
Prospectus supplement for primary offering
3 Jun 13
FWP
Free writing prospectus
2 Jun 13
FWP
Free writing prospectus
29 May 13
F-3
Shelf registration (foreign)
10 Apr 13
F-3
Shelf registration (foreign)
30 May 12
25-NSE
Exchange delisting
8 Jan 12
Proxies
No filings
Other
SD
Conflict minerals disclosure
1 Jun 21
SD
Conflict minerals disclosure
1 Jun 20
SD
Conflict minerals disclosure
28 May 19
SD
Conflict minerals disclosure
24 May 18
UPLOAD
Letter from SEC
8 Aug 17
CORRESP
Correspondence with SEC
27 Jul 17
UPLOAD
Letter from SEC
6 Jul 17
SD
Conflict minerals disclosure
29 May 17
UPLOAD
Letter from SEC
2 Feb 17
CORRESP
Correspondence with SEC
25 Jan 17
Ownership
SC 13G/A
TOWER SEMICONDUCTOR / Senvest Management ownership change
12 Feb 21
SC 13G/A
TOWER SEMICONDUCTOR / Phoenix ownership change
11 Feb 21
SC 13G/A
TOWER SEMICONDUCTOR / WELLINGTON MANAGEMENT ownership change
3 Feb 21
SC 13G/A
TOWER SEMICONDUCTOR / Harel Insurance Investments & Financial Services ownership change
27 Jan 21
SC 13G
TOWER SEMICONDUCTOR / Harel Insurance Investments & Financial Services ownership change
24 Sep 20
SC 13G/A
Beneficial ownership report (amended)
18 Feb 20
SC 13G/A
Beneficial ownership report (amended)
7 Feb 20
SC 13G
Beneficial ownership report
28 Jan 20
SC 13G/A
Tower Semiconductor LTD
23 Jan 20
SC 13G/A
Tower Semiconductor LTD
14 Feb 19
Patents
APP
Utility
Electrostatically Controlled Gallium Nitride Based Sensor And Method Of Operating Same
22 Apr 21
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer.
APP
Utility
Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same
11 Feb 21
A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer.
GRANT
Utility
Active quenching for single-photon avalanche diode using one- shot circuit
30 Nov 20
A sensor circuit having a Single Photon Avalanche Diode (SPAD) and an active quenching circuit including a quenching transistor controlled by a one-shot (or similar) circuit is disclosed.
GRANT
Utility
Semiconductor device having a radio frequency circuit and a method for manufacturing the semiconductor device
16 Nov 20
A method for manufacturing a semiconductor device, the method may include forming a first part of a hollow in first part of a first layer of the semiconductor device and coating a sidewall of the first part of the hollow with an etch stop material, wherein the forming of the first part of the hollow comprises performing at least one iteration of (i) anisotropic etching and (ii) deposition of the etch stop material; wherein when completed, the semiconductor device comprises a radio frequency (RF) circuit; forming a second part of the hollow in a second part of the first layer by performing isotropic etching that involves directing plasma through the first part of the hollow; wherein the second part of the hollow reaches either (a) a bottom of a second layer of the semiconductor device or (b) the RF circuit; and wherein at least a majority of the second part of the hollow is wider than at least a majority of the first part of the hollow.
GRANT
Utility
Apparatus, system and method of a temperature sensor
28 Sep 20
Some demonstrative embodiments include an apparatus of a temperature sensor to sense temperature, the apparatus including a first pad on a silicon substrate; a second pad on the silicon substrate; a silicon nanowire having a first end coupled to the first pad and a second end coupled to the second pad, the silicon nanowire configured to drive a current between the first pad and the second pad, the current depending at least on the temperature; and a charged dielectric layer covering at least three sides of the silicon nanowire.
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