Tower Semiconductor Ltd., the leader in high-value analog semiconductor foundry solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor's focuses on creating positive and sustainable impact on the world through long term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, integrated power management (BCD and 700V), and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm) through TPSCo.
Company profile
Ticker
TSEM
Exchange
Website
CEO
Russell Ellwanger
Employees
Incorporated
Location
Fiscal year end
Industry (SIC)
SEC CIK
TSEM stock data
Press releases
Tower Semiconductor to Present at IMS 2022 Highlighting Recent Innovations in RF Foundry Technology
14 Jun 22
Tower Semiconductor to Showcase Key Process and PDK Features of Its Silicon Photonics Process
8 Jun 22
Teledyne e2v Topaz image sensor earns Vision Systems Design 2022 Innovators Award
7 Jun 22
Tower Semiconductor Reports First Quarter 2022 Record revenue of $421 Million, a 21 Percent Year over Year Revenue Growth
16 May 22
Tower Semiconductor Expands its Leading-Edge Power Management Platforms Supporting Higher Power and Higher Voltage ICs
9 May 22
Calendar
29 Apr 22
2 Jul 22
31 Dec 22
Financial summary
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| Annual (USD) | Dec 21 | Dec 20 | Dec 19 | Dec 18 | |
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Institutional ownership, Q1 2022
56.4% owned by funds/institutions
| 13F holders | Current |
|---|---|
| Total holders | 178 |
| Opened positions | 67 |
| Closed positions | 45 |
| Increased positions | 42 |
| Reduced positions | 51 |
| 13F shares | Current |
|---|---|
| Total value | 2.98B |
| Total shares | 61.57M |
| Total puts | 1.14M |
| Total calls | 535.71K |
| Total put/call ratio | 2.1 |
| Largest owners | Shares | Value |
|---|---|---|
| Senvest Management | 7.45M | $360.42M |
| Wellington Management | 3.29M | $159M |
| Vanguard | 3.24M | $156.81M |
| MCQEF Macquarie | 3.06M | $148.14M |
| Clal Insurance Enterprises | 2.18M | $105.63M |
| JPM JPMorgan Chase & Co. | 2.02M | $97.63M |
| Alpine Associates Management | 1.68M | $81.31M |
| Arp Americas | 1.68M | $81.11M |
| Jennison Associates | 1.63M | $79.12M |
| Sand Grove Capital Management | 1.61M | $77.86M |
Financial report summary
?Content analysis
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H.S. sophomore Avg
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New words:
Agrate, Antitrust, BOD, cent, Check, Clal, cleanroom, commingled, consortium, curb, Deed, delisted, diminution, discourage, EGM, enjoined, enjoining, expended, fraction, gap, Germany, Hart, HC, HSR, ID, incurrence, infected, injunction, issuable, Italian, Italy, lawsuit, mm, nearest, omitted, pendency, People, PSU, resource, restrained, restraining, Rodino, rounded, rounding, scenario, Scott, spread, succeeded, Taishin, timeframe, Trapped, TSIT, TSNB, unchanged, undertook, unexercised, unneeded, upside, waiting
Current reports
6-K
Current report (foreign)
14 Jun 22
6-K
Notice of Annual General Meeting of Shareholders
9 Jun 22
6-K
Current report (foreign)
8 Jun 22
6-K
Current report (foreign)
7 Jun 22
6-K
Tower Semiconductor Reports First Quarter 2022
16 May 22
6-K
Current report (foreign)
8 May 22
6-K
Current report (foreign)
3 May 22
6-K
Current report (foreign)
2 May 22
6-K
Tower Shareholders Approve Intel Merger at Extraordinary General Meeting
25 Apr 22
6-K
Current report (foreign)
11 Mar 22
Registration and prospectus
S-8
Registration of securities for employees
13 May 15
F-X
Appointment of agent for service of process by issuers registering securities
10 Mar 15
F-3
Shelf registration (foreign)
10 Apr 14
D
$58.31M in equity / debt, sold $58.31M, 41 investors
8 Apr 14
424B5
Prospectus supplement for primary offering
3 Jun 13
FWP
Free writing prospectus
2 Jun 13
FWP
Free writing prospectus
29 May 13
F-3
Shelf registration (foreign)
10 Apr 13
F-3
Shelf registration (foreign)
30 May 12
25-NSE
Exchange delisting
8 Jan 12
Proxies
No filings
Other
SD
Conflict minerals disclosure
26 May 22
SD
Conflict minerals disclosure
1 Jun 21
SD
Conflict minerals disclosure
1 Jun 20
SD
Conflict minerals disclosure
28 May 19
SD
Conflict minerals disclosure
24 May 18
UPLOAD
Letter from SEC
8 Aug 17
CORRESP
Correspondence with SEC
27 Jul 17
UPLOAD
Letter from SEC
6 Jul 17
SD
Conflict minerals disclosure
29 May 17
UPLOAD
Letter from SEC
2 Feb 17
Ownership
SC 13G/A
TOWER SEMICONDUCTOR / WELLINGTON MANAGEMENT ownership change
10 Mar 22
SC 13G/A
TOWER SEMICONDUCTOR / Phoenix ownership change
8 Mar 22
SC 13G/A
TOWER SEMICONDUCTOR / Senvest Management ownership change
9 Feb 22
SC 13G/A
TOWER SEMICONDUCTOR / Phoenix ownership change
7 Feb 22
SC 13G/A
TOWER SEMICONDUCTOR / WELLINGTON MANAGEMENT ownership change
4 Feb 22
SC 13G
TOWER SEMICONDUCTOR / Migdal Insurance & Financial ownership change
2 Feb 22
SC 13G/A
TOWER SEMICONDUCTOR / Harel Insurance Investments & Financial Services ownership change
31 Jan 22
SC 13G
TOWER SEMICONDUCTOR / Clal Insurance Enterprises ownership change
18 Jan 22
SC 13G/A
TOWER SEMICONDUCTOR / WELLINGTON MANAGEMENT ownership change
8 Oct 21
SC 13G/A
TOWER SEMICONDUCTOR / Senvest Management ownership change
12 Feb 21
Patents
Utility
High resolution radiation sensor based on single polysilicon floating gate array
7 Jun 22
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Utility
Solid-state Imaging Apparatus
24 Feb 22
A solid-state imaging apparatus includes photoelectric conversion regions arranged close to a surface of a semiconductor substrate and a recessed portion provided above each photoelectric conversion region in the semiconductor substrate.
Utility
Solid-state Imaging Device
24 Feb 22
A solid-state imaging device includes a first semiconductor substrate, photoelectric conversion portions arrayed on the first semiconductor substrate and configured to convert incident light to charges, a charge storage portion configured to hold charges transferred from a corresponding one of the photoelectric conversion portions via a transfer transistor, and an interconnect layer stacked on the first semiconductor substrate and including a plurality of metal interconnects.
Utility
METHOD OF FORMING A GaN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA
24 Feb 22
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Utility
Ultraviolet Radiation Sensor
27 Jan 22
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.
Reddit threads
Daily Discussion Thread - May 16th, 2022
16 May 22
Wall Street Week Ahead for the trading week beginning May 16th, 2022
13 May 22
Daily Discussion Thread - May 13th, 2022
13 May 22
Is TWTR a risk free 10% opportunity?
26 Apr 22
Short term investments for the next 2.5 years?
10 Apr 22
$TSEM Tower Semiconductor Ltd., Intel/IFS has plans for a major acqusition of TSEM, merging the two foundries. There is a $5/10.42% upside if you buy TSEM at $48 per share.
21 Mar 22
$TSEM Tower Semiconductor Ltd., Intel/IFS has plans for a major acqusition of TSEM, merging the two foundries. There is a $5/10.42% upside if you buy TSEM at $48 per share.
21 Mar 22
Daily Discussion Thread - March 21, 2022
21 Mar 22
Daily Discussion post - March 21 2022
21 Mar 22
Intel (INTC) or Globalfoundries (GFS)?
3 Mar 22