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TSEM Tower Semiconductor

Tower Semiconductor Ltd., the leader in high-value analog semiconductor foundry solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor's focuses on creating positive and sustainable impact on the world through long term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, integrated power management (BCD and 700V), and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm) through TPSCo.

TSEM stock data

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Calendar

30 Apr 21
24 Jun 21
31 Dec 21
Quarter (USD)
Dec 20 Dec 19 Dec 18 Dec 17
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Annual (USD)
Dec 20 Dec 19 Dec 18 Dec 17
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Financial data from company earnings reports.

Data for the last complete 13F reporting period. To see the most recent changes to ownership, click the ownership history button above.

54.6% owned by funds/institutions
13F holders
Current Prev Q Change
Total holders 152 140 +8.6%
Opened positions 29 29
Closed positions 17 14 +21.4%
Increased positions 58 40 +45.0%
Reduced positions 48 50 -4.0%
13F shares
Current Prev Q Change
Total value 1.65B 1.58B +4.4%
Total shares 58.96M 61.35M -3.9%
Total puts 1.35M 1.16M +16.5%
Total calls 1.83M 3.17M -42.2%
Total put/call ratio 0.7 0.4 +101.6%
Largest owners
Shares Value Change
Wellington Management 9.39M $263.25M -0.9%
Senvest Management 7.6M $213.24M -3.8%
MCQEF Macquarie 3.18M $89.23M -2.4%
Vanguard 2.97M $83.33M +1.3%
Migdal Insurance & Financial 2.47M $69.17M +41.2%
Parsifal Capital Management 2.19M $61.39M +3.8%
Vaughan Nelson Investment Management 2.19M $61.32M +1.6%
Jennison Associates 1.8M $50.39M -1.7%
D. E. Shaw & Co. 1.55M $43.49M -13.5%
Harel Insurance Investments & Financial Services 1.46M $40.89M +11.0%
Largest transactions
Shares Bought/sold Change
Shelter Haven Capital Management 0 -1.92M EXIT
Nuveen Asset Management 400.71K -885.38K -68.8%
Migdal Insurance & Financial 2.47M +720K +41.2%
Meitav Dash Investments 705.18K +705.18K NEW
Norges Bank 0 -694.95K EXIT
ATAC Neuberger Berman 657.48K +657.48K NEW
PFG Principal Financial Group Inc - Registered Shares 521.05K +521.05K NEW
Manufacturers Life Insurance Company, The 0 -504.19K EXIT
Royce & Associates 477K +477K NEW
GS Goldman Sachs 62.1K -410.24K -86.9%
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Proxies

No filings

Patents

APP
Utility
Electrostatically Controlled Gallium Nitride Based Sensor And Method Of Operating Same
22 Apr 21
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer.
APP
Utility
Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same
11 Feb 21
A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer.
GRANT
Utility
Active quenching for single-photon avalanche diode using one- shot circuit
30 Nov 20
A sensor circuit having a Single Photon Avalanche Diode (SPAD) and an active quenching circuit including a quenching transistor controlled by a one-shot (or similar) circuit is disclosed.
GRANT
Utility
Semiconductor device having a radio frequency circuit and a method for manufacturing the semiconductor device
16 Nov 20
A method for manufacturing a semiconductor device, the method may include forming a first part of a hollow in first part of a first layer of the semiconductor device and coating a sidewall of the first part of the hollow with an etch stop material, wherein the forming of the first part of the hollow comprises performing at least one iteration of (i) anisotropic etching and (ii) deposition of the etch stop material; wherein when completed, the semiconductor device comprises a radio frequency (RF) circuit; forming a second part of the hollow in a second part of the first layer by performing isotropic etching that involves directing plasma through the first part of the hollow; wherein the second part of the hollow reaches either (a) a bottom of a second layer of the semiconductor device or (b) the RF circuit; and wherein at least a majority of the second part of the hollow is wider than at least a majority of the first part of the hollow.
GRANT
Utility
Apparatus, system and method of a temperature sensor
28 Sep 20
Some demonstrative embodiments include an apparatus of a temperature sensor to sense temperature, the apparatus including a first pad on a silicon substrate; a second pad on the silicon substrate; a silicon nanowire having a first end coupled to the first pad and a second end coupled to the second pad, the silicon nanowire configured to drive a current between the first pad and the second pad, the current depending at least on the temperature; and a charged dielectric layer covering at least three sides of the silicon nanowire.