613 patents
Page 2 of 31
Utility
Memory Device and Method for Fabricating Memory Device
11 Nov 20
A structure of memory device is provided.
Chin-Chin Tsai
Filed: 8 May 19
Utility
Magnetoresistive Random Access Memory
11 Nov 20
A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ.
Ting-Hsiang Huang, Yi-Chung Sheng, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
Filed: 3 Jun 19
Utility
Remote Server, Remote Control System and Remote Control Method
4 Nov 20
A remote server, a remote control system and a remote control method are provided.
Lian-Hua SHIH, Li-Hsin YANG, Chih-Cheng CHEN, Ssu-Chieh LIN, Yu-Chi LIN, Fa-Fu HU
Filed: 9 Jun 19
Utility
Method for Fabricating Shallow Trenchisolation
4 Nov 20
A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI).
Hao-Hsuan Chang, Hung-Chun Lee, Shu-Ming Yeh, Ting-An Chien, Bin-Siang Tsai
Filed: 3 Jun 19
Utility
Storage Node Contact Structure of a Memory Device
4 Nov 20
The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).
Pin-Hong Chen, Tsun-Min Cheng, Chih-Chieh Tsai, Tzu-Chieh Chen, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Yi-Wei Chen, Hsin-Fu Huang, Chi-Mao Hsu, Li-Wei Feng, Ying-Chiao Wang, Chung-Yen Feng
Filed: 15 Jul 20
Utility
Semiconductor Device and Method for Fabricating the Same
4 Nov 20
A semiconductor device comprises a substrate, a gate structure disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate structure.
Chu-Ming Ma, Hung-Chi Huang, Hsien-Ta Chung
Filed: 29 May 19
Utility
Method for fabricating low and high/medium voltage transistors on substrate
2 Nov 20
A structure of nonvolatile memory device includes a substrate, having a logic device region and a memory cell region.
Liang Yi, Zhaobing Li, Chi Ren
Filed: 28 Oct 18
Utility
Layout of semiconductor structure, semiconductor device and method of forming the same
2 Nov 20
A layout of semiconductor structure includes plural patterns arranged along a first direction to form plural columns, with each pattern spaced from each other.
Feng-Yi Chang, Yu-Cheng Tung, Fu-Che Lee
Filed: 28 Dec 17
Utility
Method of forming semiconductor device
2 Nov 20
A semiconductor device and method of forming the same, the semiconductor device includes bit lines, a transistor, a dielectric layer, plugs and a capping layer.
Feng-Yi Chang, Fu-Che Lee, Chieh-Te Chen
Filed: 5 Dec 18
Utility
Semiconductor Device of Electrostatic Discharge Protection
28 Oct 20
A semiconductor device of ESD protection includes a first P-type well in a substrate to receive a protected terminal and a first N-type well abutting the first P-type well in the substrate.
Ting-Yao Lin, Chun Chiang, Ping-Chen Chang, Tien-Hao Tang
Filed: 24 Apr 19
Utility
Method of Rounding Fin-shaped Structure
28 Oct 20
A method of rounding fin-shaped structures includes the following steps.
Hao-Hsuan Chang, Bin-Siang Tsai, Ting-An Chien, Yi-Liang Ye
Filed: 28 Apr 19
Utility
Method for forming a semiconductor structure
26 Oct 20
A method for forming a semiconductor structure is provided.
Hao-Yeh Liu, Jia-Feng Fang, Yu-Hsiang Lin, Ching-Hsiang Chiu, Chia-Wei Liu
Filed: 16 Dec 18
Utility
Semiconductor package structure and method for forming the same
26 Oct 20
A semiconductor package structure and a method for forming the same are disclosed.
Chun-Hung Chen, Chu-Fu Lin, Ming-Tse Lin
Filed: 21 Mar 19
Utility
Semiconductor device
26 Oct 20
A manufacturing method of a semiconductor device includes the following steps.
En-Chiuan Liou, Yu-Cheng Tung, Chih-Wei Yang
Filed: 8 May 19
Utility
Method of forming semiconductor memory device
26 Oct 20
A method of forming semiconductor memory device, the semiconductor memory device includes a substrate, plural gates, plural cell plugs, a capacitor structure and a stacked structure.
Feng-Yi Chang, Fu-Che Lee, Chieh-Te Chen
Filed: 14 Jul 19
Utility
Method for improving the quality of a high-voltage metal oxide semiconductor
19 Oct 20
The present invention provides a method for improving the quality of a high-voltage metal oxide semiconductor (HV MOS), the method includes: firstly, a substrate is provided, next, a hard mask layer is formed on the substrate, an oxygen plasma treatment is then performed to the hard mask layer, so as to form an oxide layer on the hard mask layer.
Tsung-Hsun Tsai
Filed: 23 Jun 19
Utility
Method of forming stacked structure of memory
19 Oct 20
A method of forming a dielectric layer includes the following steps.
Wei-Hsin Liu, Ta-Wei Chiu, Chia-Lung Chang, Po-Chun Chen, Hong-Yi Fang, Yi-Wei Chen
Filed: 29 Jan 19
Utility
Overlay mark structure and measurement method thereof
19 Oct 20
An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer.
Yu-Wei Cheng, Bo-Jou Lu, Chun-Chi Yu
Filed: 8 Jan 19
Utility
Semiconductor Device and Method for Fabricating the Same
14 Oct 20
A method for fabricating semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer; forming an active device on the substrate; forming an interlayer dielectric (ILD) layer on the substrate and the active device; forming a first contact plug in the ILD layer to electrically connect the active device; and forming a second contact plug in the ILD layer and the insulating layer after forming the first contact plug.
Mengkai Zhu
Filed: 4 May 19
Utility
Structure of Memory Device and Fabrication Method Thereof
14 Oct 20
A structure of memory device is provided.
Chung-Tse Chen, Ko-Chi Chen, Tzu-Yun Chang
Filed: 20 May 19