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Taiwan Semiconductor Manufacturing (TSM)

16264 patents

Page 3 of 814
Utility
Semiconductor Devices Including Two-dimensional Material and Methods of Fabrication Thereof
26 May 22
According to embodiments of the present disclosure, two-dimensional (2D) materials may be used as nanosheet channels for multi-channel transistors.
Mrunal Abhijith Khaderbad, Dhanyakumar Mahaveer Sathaiya
Filed: 25 Nov 20
Utility
Semiconductor Devices with Backside Contacts and Isolation
26 May 22
A method includes forming a fin structure over a substrate, wherein the fin structure includes a base layer, an isolating layer over the base layer, and a stack of channel layers and first sacrificial layers alternately stacked over the isolating layer.
Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang
Filed: 25 Nov 20
Utility
Wafer Level Image Sensor Package
26 May 22
A method for forming an image sensor package is provided.
Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
Filed: 10 Feb 22
Utility
Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
26 May 22
Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material.
Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu HO, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei WU, Zhiqiang Wu
Filed: 25 Nov 20
Utility
Semiconductor Device Structure and Methods of Forming the Same
26 May 22
A semiconductor device structure, along with methods of forming such, are described.
Lin-Yu HUANG, Li-Zhen YU, Cheng-Chi CHUANG, Kuan-Lun CHENG, Chih-Hao WANG
Filed: 25 Nov 20
Utility
Source/drain Features
26 May 22
A semiconductor structure and a method of forming the same are provided.
Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee, Wei-Yang Lee
Filed: 20 Nov 20
Utility
Gap Spacer for Backside Contact Structure
26 May 22
Semiconductor devices and methods of forming the same are provided.
Li-Zhen Yu, Lin-Yu Huang, Kuan-Lun Cheng, Chih-Hao Wang
Filed: 24 Nov 20
Utility
Integrated Chip with a Gate Structure Over a Recess
26 May 22
The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface.
Yong-Sheng Huang, Ming Chyi Liu
Filed: 20 Nov 20
Utility
Silicide Backside Contact
26 May 22
A semiconductor structure and a method of forming the same are provided.
Chen-Hung Tsai, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
Filed: 24 Nov 20
Utility
FinFET Device Comprising Plurality of Dummy Protruding Features
26 May 22
A method includes forming a first active fin structure and a second active fin structure on a substrate.
Che-Cheng Chang, Po-Chi Wu, Chih-Han Lin, Horng-Huei Tseng
Filed: 14 Feb 22
Utility
Semiconductor Device and Method
26 May 22
In an embodiment, a method includes forming a first gate electrode over a substrate.
Yun-Yan Chung, Chao-Ching Cheng, Chao-Hsin Chien
Filed: 19 May 21
Utility
Method of Forming Transistors of Different Configurations
26 May 22
The present disclosure provides semiconductor devices and methods of forming the same.
Wei-Lun Min, Chang-Miao Liu
Filed: 23 Nov 20
Utility
Strained Gate Semiconductor Device with Doped Interlayer Dielectric Material
26 May 22
A semiconductor includes a gate stack over a substrate.
Cheng-Ta WU, Chii-Ming WU, Shiu-Ko JANGJIAN, Kun-Tzu LIN, Lan-Fang CHANG
Filed: 10 Feb 22
Utility
Semiconductor Device and Method
26 May 22
In an embodiment, a device includes: a first interconnect structure including metallization patterns; a second interconnect structure including a power rail; a device layer between the first interconnect structure and the second interconnect structure, the device layer including a first transistor, the first transistor including an epitaxial source/drain region; and a conductive via extending through the device layer, the conductive via connecting the power rail to the metallization patterns, the conductive via contacting the epitaxial source/drain region.
Yi-Bo Liao, Yu-Xuan Huang, Pei-Yu Wang, Cheng-Ting Chung, Ching-Wei Tsai, Hou-Yu Chen
Filed: 14 Feb 22
Utility
Structure and Method for Mram Devices Having Spacer Element
26 May 22
Methods and devices are provided that include a magnetic tunneling junction (MTJ) element.
Hsiang-Ku SHEN, Dian-Hau CHEN
Filed: 25 Nov 20
Utility
Structure and Method for Integrating Mram and Logic Devices
26 May 22
A method includes providing a structure having a memory region and a logic region; a first metal layer and a dielectric barrier layer over the first metal layer in both the memory region and the logic region; a first dielectric layer over the dielectric barrier layer; multiple magnetic tunneling junction (MTJ) devices over the first metal layer, the dielectric barrier layer, and the first dielectric layer; and a second dielectric layer over the first dielectric layer and the MTJ devices.
Hsiang-Ku Shen, Dian-Hau Chen
Filed: 25 Nov 20
Utility
Packaged Semiconductor Devices with Wireless Charging Means
26 May 22
A semiconductor device package is provided.
Chen-Hua YU, Hao-Yi TSAI, Tzu-Sung HUANG, Ming-Hung TSENG, Hung-Yi KUO
Filed: 10 Feb 22
Utility
Processing-in-memory Instruction Set with Homomorphic Error Correction
26 May 22
A method includes generating an ECC encoded output data by executing an ECC-Space operation using an ECC encoded first data from a memory as a first operand and an ECC encoded second data from the memory as a second operand.
Katherine H. CHIANG
Filed: 31 Jan 22
Utility
Cutting apparatus with auto chuck cleaning mechanism
24 May 22
A cutting apparatus is provided.
Chih-Min Tseng
Filed: 15 Jun 20
Utility
Testing equipment, its component carrying device and testing method of the testing equipment
24 May 22
A testing equipment includes a testing platform and a component carrying device including a carrying arm, a vacuum suction unit, a working bottom cover and a fluid transmission assembly.
Chih-Chieh Liao, Chih-Feng Cheng, Yu-Min Sun
Filed: 21 Jan 21
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