28912 patents
Page 6 of 1446
Utility
Molded Dies in Semiconductor Packages and Methods of Forming Same
18 Jan 24
A package includes an interposer having a first redistribution structure; a first die directly bonded to a first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; a second die directly bonded to the first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; an encapsulant around the first die and the second die; and a plurality of conductive connectors on a second side of the first redistribution structure opposite to the first die and the second die.
Jie Chen, Hsien-Wei Chen, Ming-Fa Chen
Filed: 7 Aug 23
Utility
Semiconductor Device and Method
18 Jan 24
In an embodiment, a device includes: a first fin extending from a substrate; a second fin extending from the substrate; a gate spacer over the first fin and the second fin; a gate dielectric having a first portion, a second portion, and a third portion, the first portion extending along a first sidewall of the first fin, the second portion extending along a second sidewall of the second fin, the third portion extending along a third sidewall of the gate spacer, the third portion and the first portion forming a first acute angle, the third portion and the second portion forming a second acute angle; and a gate electrode on the gate dielectric.
Shahaji B. More, Chandrashekhar Prakash Savant
Filed: 31 Jul 23
Utility
Grid Structure with at Least Partially Angled Sidewalls
18 Jan 24
A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure.
Wei-Lin CHEN, Ching-Chung SU, Chun-Hao CHOU, Kuo-Cheng LEE
Filed: 2 Aug 23
Utility
Dielectric Structure for Small Pixel Designs
18 Jan 24
Various embodiments of the present disclosure are directed towards an image sensor.
Wei Long Chen, Wen-I Hsu, Feng-Chi Hung, Jen-Cheng Liu, Dun-Nian Yaung
Filed: 4 Jan 23
Utility
Composite Bsi Structure and Method of Manufacturing the Same
18 Jan 24
Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance.
Wei Chuang Wu, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Jhy-Jyi Sze, Keng-Yu Chou, Yen-Ting Chiang, Ming-Hsien Yang, Chun-Yuan Chen
Filed: 21 Jul 23
Utility
Trench Isolation Structure for Image Sensors
18 Jan 24
Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer.
Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chin-Chia Kuo, Wen-Hau Wu, Hua-Mao Chen, Chih-Kung Chang
Filed: 8 Aug 23
Utility
Co-optimization of Finfet Devices by Source/drain Modulation and Structures Thereof
18 Jan 24
Structures and methods for the co-optimization of various device types include performing a first photolithography and etch process to simultaneously form a first source/drain recess for a first device in a first substrate region and a third source/drain recess for a third device in a third substrate region different than the first substrate region.
Ta-Chun LIN, Jyun-Yang SHEN, Chun-Jun LIN, Kuo-Hua PAN, Jhon Jhy LIAW
Filed: 15 Jul 22
Utility
Void-Free Conductive Contact Formation
18 Jan 24
A source/drain component is disposed over an active region and surrounded by a dielectric material.
Cheng-Wei Chang, Chien Chang, Kan-Ju Lin, Harry Chien, Shuen-Shin Liang, Chia-Hung Chu, Sung-Li Wang, Shahaji B. More, Yueh-Ching Pai
Filed: 28 Mar 23
Utility
Integrated Circuit Package and Method of Forming Thereof
18 Jan 24
A semiconductor package includes a redistribution structure, a first device and a second device attached to the redistribution structure, the first device including: a first die, a support substrate bonded to a first surface of the first die, and a second die bonded to a second surface of the first die opposite the first surface, where a total height of the first die and the second die is less than a first height of the second device, and where a top surface of the substrate is at least as high as a top surface of the second device, and an encapsulant over the redistribution structure and surrounding the first device and the second device.
Hsien-Wei Chen, Ming-Fa Chen, Ying-Ju Chen
Filed: 21 Jul 23
Utility
Method of Making Amphi-fet Structure and Method of Designing
18 Jan 24
A method of making a semiconductor device includes forming a first active region on a first side of a substrate.
Chih-Yu LAI, Chih-Liang CHEN, Chi-Yu LU, Shang-Syuan CIOU, Hui-Zhong ZHUANG, Ching-Wei TSAI, Shang-Wen CHANG
Filed: 27 Jul 23
Utility
Semiconductor Devices and Methods of Manufacture
18 Jan 24
Transistors of different types of electronic devices on the same semiconductor substrate are configured with different transistor attributes to increase the performance of the different types of electronic devices.
Ta-Chun LIN, Kuo-Hua PAN, Jhon Jhy LIAW
Filed: 21 Jul 23
Utility
Semiconductor Device and Method
18 Jan 24
A method includes forming first devices in a first region of a substrate, wherein each first device has a first number of fins; forming second devices in a second region of the substrate that is different from the first region, wherein each second device has a second number of fins that is different from the first number of fins; forming first recesses in the fins of the first devices, wherein the first recesses have a first depth; after forming the first recesses, forming second recesses in the fins of the second devices, wherein the second recesses have a second depth different from the first depth; growing a first epitaxial source/drain region in the first recesses; and growing a second epitaxial source/drain region in the second recess.
Chih-Yun Chin, Yen-Ru Lee, Chien-Chang Su, Yan-Ting Lin, Chien-Wei Lee, Bang-Ting Yan, Heng-Wen Ting, Chii-Horng Li, Yee-Chia Yeo
Filed: 1 Aug 23
Utility
Finfet Device and Method
18 Jan 24
A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the spacer, and the source/drain region; a contact plug extending through the ILD and contacting the source/drain region; a dielectric layer including a first portion on a top surface of the ILD and a second portion extending between the ILD and the contact plug, wherein a top surface of the second portion is closer to the substrate than the top surface of the ILD; and an air gap between the spacer and the contact plug, wherein the second portion of the dielectric layer seals the top of the air gap.
Tsai-Jung Ho, Tze-Liang Lee
Filed: 1 Aug 23
Utility
Stacked Substrate Structure with Inter-tier Interconnection
18 Jan 24
The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure.
Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Hsun-Ying Huang, Wei-Chih Weng, Yu-Yang Shen
Filed: 21 Jul 23
Utility
Seam-Filling of Metal Gates with Si-Containing Layers
18 Jan 24
A method includes forming a dummy gate stack over a semiconductor region, forming epitaxial source/drain regions on opposite sides of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, and depositing a work-function layer over the gate dielectric layer.
Hsin-Yi Lee, Weng Chang, Chi On Chui
Filed: 9 Aug 23
Utility
Method and Related Apparatus for Integrating Electronic Memory In an Integrated Chip
18 Jan 24
In some embodiments, a method for forming an integrated chip (IC) is provided.
Tung Ying Lee, Shao-Ming Yu, Tzu-Chung Wang
Filed: 2 Aug 23
Utility
Gate Structure of Semiconductor Device and Method of Forming Same
18 Jan 24
A semiconductor device a method of forming the same are provided.
Kuei-Lun Lin, Yen-Fu Chen, Po-Ting Lin, Chia-Yuan Chang, Xiong-Fei Yu, Chi On Chui
Filed: 8 Aug 23
Utility
Ferroelectric Field Effect Transistor
18 Jan 24
Semiconductor devices and methods of forming the same are provided.
Marcus Johannes Henricus Van Dal, Gerben Doornbos, Georgios Vellianitis
Filed: 26 Jul 23
Utility
Reducing K Values of Dielectric Films Through Anneal
18 Jan 24
A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer.
Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Szu-Ying Chen
Filed: 7 Aug 23
Utility
Power on Control Circuits and Methods of Operating the Same
18 Jan 24
A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node.
Po-Zeng KANG, Wen-Shen CHOU, Yung-Chow PENG
Filed: 11 Jul 23