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Taiwan Semiconductor Manufacturing (TSM)

Utility
Reflective Mask and Fabricating Method Thereof
12 May 22
The prevent disclosure provides a reflective mask.
Tsiao-Chen WU, Pei-Cheng HSU
Filed: 19 Jan 22
Utility
Systems and Methods for Capacitance Extraction
12 May 22
A method for capacitance extraction includes: performing a first capacitance extraction on one or more first regions of a semiconductor layout; performing a second capacitance extraction on one or more second regions of the semiconductor layout, a resolution of the second capacitance extraction being less than a resolution of the first capacitance extraction; constructing a netlist for the semiconductor layout based on results of the first capacitance extraction and of the second capacitance extraction; and modifying the semiconductor layout based on the netlist.
Kuo Fu LEE, Ching Yang YEN, Ke-Ying SU, Chau-Wen WEI
Filed: 30 Jun 21
Utility
Routing-resource-improving Method of Generating Layout Diagram, System for Same and Semiconductor Device
12 May 22
A method (of manufacturing a semiconductor device) includes, for a layout diagram stored on a non-transitory computer-readable medium, the semiconductor device being based on the layout diagram, the layout diagram including a first level of metallization (M_1st level) and a first level of interconnection (VIA_1st level) thereover corresponding to a first layer of metallization and a first layer of interconnection thereover in the semiconductor device, generating the layout diagram including: selecting a candidate pattern in the layout diagram, the candidate pattern being a first conductive pattern in the M_1st level (first M_1st pattern); determining that the candidate pattern satisfies one or more criteria; and increasing a size of the candidate pattern thereby revising the layout diagram.
Shih-Wei PENG, Jiann-Tyng TZENG, Wei-Cheng LIN, Jay YANG
Filed: 21 Jan 22
Utility
Method of Fabricating Package Structure
12 May 22
A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer.
Chih-Hao Chen, Chin-Fu Kao, Li-Hui Cheng, Szu-Wei Lu
Filed: 28 Jan 22
Utility
Method and System for Fixing Violation of Layout
12 May 22
A method includes the following operations: receiving design rule violations of a first layout; classifying, according to first chip features of the first layout, a first violation of the design rule violations into a first class of predefined classes; generating a first vector array for at least one of the first chip features of the first layout, that is associated with the first violation; selecting, according to the first vector array, first operations from pre-stored operations; generating a second layout based on the first layout and the first operations.
Yi-Lin CHUANG, Song LIU, Pei-Pei CHEN, Heng-Yi LIN, Shih-Yao LIN, Chin-Hsien WANG
Filed: 8 Dec 20
Utility
Semiconductor Package and Method of Manufacturing the Same
12 May 22
A semiconductor package includes a substrate, a semiconductor die, a ring structure and a lid.
Kai-Ming Ching, Shu-Shen Yeh, Chien-Hung Chen, Hui-Chang Yu, Yu-Min Cheng
Filed: 16 Mar 21
Utility
Method and Apparatus of Electromigration Check
12 May 22
A method includes conducting an electromigration (EM) check process on a schematic design, conducting a mitigating process to mitigate one or more electromigration violations identified during conducting the EM check process, and generating a layout design of the schematic design after at least one iteration of a design process including the EM check process and the mitigating process.
Hsien YU TSENG, Tsun-Yu YANG
Filed: 27 Jan 22
Utility
Package Structure, Semiconductor Device and Manufacturing Method Thereof
12 May 22
A package structure includes a solder feature, a first redistribution layer structure on the solder feature, and a die mounted on and electrically coupled to the first redistribution layer structure.
Fong-yuan CHANG, Lee-Chung Lu, Jyh Chwen Frank Lee, Po-Hsiang Huang, Xinyu Bao, Sam Vaziri
Filed: 6 Jul 21
Utility
Ferroelectric Fet-based Content Addressable Memory
12 May 22
An efficient FeFET-based CAM is disclosed which is capable of performing normal read, write but has the ability to match input data with don't-care.
Shih-Lien Linus Lu
Filed: 24 Jan 22
Utility
Package Structure
12 May 22
A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided.
Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
Filed: 25 Jan 22
Utility
Ion Beam Etching Chamber with Etching By-product Redistributor
12 May 22
In some embodiments, the present disclosure relates to an etching apparatus.
Te-Hsien Hsieh, Lee-Chuan Tseng
Filed: 27 Jan 22
Utility
Isolation with Multi-step Structure
12 May 22
A semiconductor device structure is provided.
Ta-Chun LIN, Tien-Shao CHUANG, Kuang-Cheng TAI, Chun-Hung CHEN, Chih-Hung HSIEH, Kuo-Hua PAN, Jhon-Jhy LIAW
Filed: 25 Jan 22
Utility
Method of Manufacturing a Semiconductor Device
12 May 22
A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell, the first cell and the second. cell are arranged in a first direction; forming a plurality of first metal strips arranged in a second direction and extending in the first direction on a first plane; forming a first trench over a boundary between the first cell and the second cell, a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall extending in the first direction; and fort plurality of second metal strips extending in the second direction on a third plane over the second plane and including a first second metal strip and a second second metal strip separated by the separating wall.
SHIH-WEI PENG, CHIA-TIEN WU, JIANN-TYNG TZENG
Filed: 21 Jan 22
Utility
Semiconductor Device Having Doped Work Function Metal Layer
12 May 22
A semiconductor device includes a substrate, a gate stack, and epitaxy structures.
Chih-Hsiung HUANG, Chung-En TSAI, Chee-Wee LIU, Kun-Wa KUOK, Yi-Hsiu HSIAO
Filed: 26 Jan 22
Utility
Etching to Reduce Line Wiggling
12 May 22
A method for reducing wiggling in a line includes forming a first patterning layer over a metal feature and depositing a first mask layer over the first patterning layer.
Kuan-Wei Huang, Cheng-Li Fan, Yu-Yu Chen
Filed: 27 Jan 22
Utility
Integrated Circuit with Active Region Jogs
12 May 22
An IC structure includes first and second gates, first and second source/drain regions, and an isolation region.
Tian-Yu XIE, Xin-Yong WANG, Lei PAN, Kuo-Ji CHEN
Filed: 27 Jan 22
Utility
Method of Forming Contact Metal
12 May 22
A semiconductor device is disclosed.
Chun-Hsien Huang, Hong-Mao Lee, Hsien-Lung Yang, Yu-Kai Chen, Wei-Jung Lin
Filed: 21 Jan 22
Utility
Display Device and Manufacturing Method Thereof
12 May 22
A display device includes a semiconductor substrate, an isolation layer, a light-emitting layer and a second electrode.
Sheng-Yu Wu, Mirng-Ji Lii, Shang-Yun Tu, Ching-Hui Chen
Filed: 21 Jan 22
Utility
Anchor-Shaped Backside Via and Method Thereof
12 May 22
A semiconductor structure includes first and second source/drain (S/D) features, one or more channel layers connecting the first and the second S/D features, a high-k metal gate engaging the one or more channel layers, an isolation structure, a power rail under the isolation structure, and a via structure extending through the isolation structure and electrically connecting the first S/D feature and the power rail.
Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang
Filed: 24 Jan 22
Utility
Core-shell Nanostructures for Semiconductor Devices
12 May 22
The structure of a semiconductor device with core-shell nanostructured channel regions between source/drain regions of FET devices and a method of fabricating the semiconductor device are disclosed.
Cheng-Yi PENG, Song-Bor LEE
Filed: 24 Jan 22
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