865 patents
Utility
Method for fabricating interconnection using graphene
16 Jan 24
Semiconductor fabrication method for manufacturing an interconnect structure is provided.
Ming Zhou
Filed: 1 Apr 22
Utility
Mask Plate, Alignment Mark and Photolithography System
4 Jan 24
A mask plate, an alignment mark and a photolithography system are provided.
Wei Hua SANG, Shi Jie WU, Bin XING
Filed: 14 Sep 23
Utility
Semiconductor Structure and Fabrication Method Thereof
4 Jan 24
A semiconductor structure and fabrication method are provided.
Nan WANG
Filed: 27 Nov 20
Utility
Semiconductor Structure and Forming Method Thereof, and Photomask Layout
4 Jan 24
Provided are a semiconductor structure and a forming method thereof, and a photomask layout.
Kuchanari SUBHASH, Jisong JIN, Nalawar PRASANNA, Jun WANG
Filed: 14 Sep 23
Utility
Semiconductor Structure and Fabrication Method Thereof
21 Dec 23
Semiconductor structure and formation method are provided.
Haiyang ZHANG, Bo SU, Xingyu XIAO
Filed: 24 Nov 20
Utility
Semiconductor Structure and Method for Forming Same
21 Dec 23
A semiconductor structure and a method for forming same are provided.
Jisong JIN
Filed: 12 Jan 23
Utility
Semiconductor Structure and Method for Forming Same
14 Dec 23
The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure.
Bingquan WANG, Siriguleng Zhang, Dayong Yan, Zhigao Wang, Daming Zhang
Filed: 26 May 23
Utility
Semiconductor Structure and Method for Forming Same
14 Dec 23
The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure.
Bingquan WANG, Siriguleng ZHANG, Dayong YAN, Zhigao WANG, Hui REN
Filed: 26 May 23
Utility
Semiconductor Structure and Method for Forming Same
14 Dec 23
Semiconductor structures and methods for forming the same are provided.
Zhenyang ZHAO, Bo SU, Yu FU, Shiliang JI
Filed: 27 Apr 23
Utility
Semiconductor Structure and Fabrication Method Thereof
14 Dec 23
A semiconductor structure includes a substrate, a body region and a drift region in the substrate, a first gate structure over the body region and the drift region, a second gate structure over the drift region, a source in the body region, and a drain in the drift region.
Lijie ZHANG
Filed: 23 May 23
Utility
Semiconductor Structure and Fabrication Method Thereof
7 Dec 23
A semiconductor structure includes a substrate, a first electrode plate over the substrate, a second electrode plate over the first electrode plate, and a sidewall structure.
Ya DING, Jinsong WANG, Linhong YANG, Yanhong ZHANG, Yichen DU, Qiuying CHEN
Filed: 25 May 23
Utility
Semiconductor device
5 Dec 23
The present disclosure provides a semiconductor device.
Nan Wang
Filed: 10 Sep 21
Utility
Semiconductor Structure and Fabrication Method Thereof
30 Nov 23
A semiconductor structure includes a substrate, a first isolation layer in the substrate, composite layers over the substrate, and a second isolation layer between adjacent composite layers.
Lijie ZHANG
Filed: 25 May 23
Utility
Photoelectric Sensor and Method for Forming Same, and Electronic Device
30 Nov 23
A photoelectric sensor and a method for forming same and an electronic device are provided.
Hongmin LIU, Qiangwei CUI, Changcheng GAO
Filed: 11 Oct 22
Utility
Semiconductor structure and fabrication method thereof
28 Nov 23
A semiconductor structure and a fabrication method thereof.
Qiongyang Zhao, Anni Wang
Filed: 6 Aug 21
Utility
Semiconductor Structure and Method for Forming Same
16 Nov 23
A semiconductor structure and a method for forming the same are provided.
Bo SU, Abraham YOO, Hansu OH, Byung Sup SHIM
Filed: 29 Mar 23
Utility
Semiconductor device
14 Nov 23
A semiconductor device includes a substrate; a gate structure, located over the substrate, the gate structure including a first gate oxide layer, a second gate oxide layer, and a silicon layer.
Hu Wang, Shan Shan Wang, Feng Qiu, Wei Hu Zhang
Filed: 11 Oct 21
Utility
Method and device for finFET SRAM
14 Nov 23
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, an interlayer dielectric layer, multiple trenches in the interlayer dielectric layer including first, second, third trenches for forming respective gate structures of first, second, and third transistors, forming an interface layer on the bottom of the trenches; forming a high-k dielectric layer on the interface layer and sidewalls of the trenches; forming a first PMOS work function adjustment layer on the high-k dielectric layer of the third trench; forming a second PMOS work function adjustment layer in the trenches after forming the first PMOS work function adjustment layer; forming an NMOS work function layer in the trenches after forming the second PMOS work function adjustment layer; and forming a barrier layer in the trenches after forming the NMOS work function layer and a metal gate layer on the barrier layer.
Yong Li
Filed: 9 Dec 21
Utility
Semiconductor Structure and Method of Forming the Same
9 Nov 23
A semiconductor structure includes a substrate.
Xiaodong WANG, Fei TANG, Weihong QIAN, Xining WANG
Filed: 4 May 23
Utility
Semiconductor structure formation method and mask
7 Nov 23
A semiconductor structure formation method and a mask are provided.
Jisong Jin
Filed: 31 Mar 21