75 patents
Page 4 of 4
Utility
Semiconductor Device In a Level Shifter with Electrostatic Discharge (Esd) Protection Circuit and Semiconductor Chip
26 Aug 21
The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress.
Kyong Jin HWANG, Hyun Kwang JEONG
Filed: 12 May 21
Utility
Circuit for generating bias current for reading OTP cell and control method thereof
24 Aug 21
Provided is a circuit for generating a bias current, which includes a current generation unit including a plurality of current mirrors that generate a plurality of currents having different levels.
Duk Ju Jeong
Filed: 11 May 20
Utility
Mask Layout, Semiconductor Device and Manufacturing Method Using the Same
5 Aug 21
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern.
Guk Hwan KIM
Filed: 19 Apr 21
Utility
Semiconductor package and a method of manufacturing the same
3 Aug 21
A method to manufacture a semiconductor package includes: preparing a metal substrate; attaching semiconductor dies to the metal substrate at an interval; attaching a bonding film to the semiconductor dies; applying a mold material on the semiconductor dies and the metal substrate, and curing the mold material to form a mold member; grinding the mold member and the metal substrate to a thickness; removing the bonding film; attaching a redistribution layer to the semiconductor dies; and cutting between the semiconductor dies.
Jae Sik Choi, Dong Seong Oh, Si Hyeon Go
Filed: 6 Mar 19
Utility
Power semiconductor device with alternating source region and body contact region and manufacturing method thereof
6 Jul 21
A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.
Soo Chang Kang, Seong Jo Hong
Filed: 23 Oct 17
Utility
Semiconductor device and manufacturing method thereof
6 Jul 21
A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof.
Yong Won Lee, Jin Woo Han, Dae Won Hwang, Kyung Wook Kim
Filed: 5 Mar 19
Utility
Auto Trimming Device for Oscillator and Method of Auto Trimming Device for Oscillator
1 Jul 21
An auto trimming device includes an oscillator configured to generate an oscillator clock signal, a subtractor configured to receive an expected value for a target frequency and the oscillator clock signal, configured to output a difference value between the expected value and the oscillator clock signal, an index value selector configured to calculate a unit index value using the difference value and configured to detect and output a target index value from the unit index value, an index value register configured to output an oscillator trimming code corresponding to the target index value to the oscillator, and an embedded memory configured to store the oscillator trimming code as a target oscillator trimming code for the target frequency.
Yong Sup LEE, Gil Sung ROH
Filed: 1 Jul 20
Utility
Semiconductor device in a level shifter with electrostatic discharge (ESD) protection circuit and semiconductor chip
22 Jun 21
The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress.
Kyong Jin Hwang, Hyun Kwang Jeong
Filed: 31 Jul 18
Utility
Power semiconductor device and method for manufacturing the same
15 Jun 21
A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.
Seong Jo Hong, Soo Chang Kang, Ha Yong Yang, Young Ho Seo
Filed: 9 Jan 20
Utility
Display driving device and display device including the same
8 Jun 21
A display driving device for driving a display panel includes a first driving circuit configured to output a first image signal, a second driving circuit configured to output a second image signal, a first switch circuit connected to the first driving circuit, and configured to transmit the first image signal to a part of a first set of sub-pixels arranged in the display panel based on a first switching signal during a first horizontal time interval, and a second switch circuit connected to the second driving circuit, and configured to transmit the second image signal to a part of a second set of sub-pixels arranged in the display panel adjacent to the first set of sub-pixels based on a second switching signal during the first horizontal time interval, wherein a width of the first switching signal and a width of the second switching signal in the first horizontal time differ from each other.
Yeon Kyoung Park, Hyoung Kyu Kim, Dae Young Yoo
Filed: 1 Aug 19
Utility
Mask layout, semiconductor device and manufacturing method using the same
25 May 21
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern.
Guk Hwan Kim
Filed: 1 Aug 19
Utility
Display apparatus and driving method thereof
18 May 21
A decoder of a display apparatus and a decoding method thereof is provided.
Eun Kyu Seong
Filed: 5 Aug 19
Utility
Semiconductor package device
18 May 21
A semiconductor package device includes a lead frame including a lead frame pad and lead frame leads, a semiconductor chip located on the lead frame pad, and a substrate located on the semiconductor chip, wherein the lead frame leads include first lead frame leads coupled to the lead frame pad and second lead frame leads separated from the lead frame pad and attached to a bottom surface of the substrate.
Moon Taek Sung, Jae Sik Choi
Filed: 12 Jan 18
Utility
Wafer-level chip-scale package including power semiconductor and manufacturing method thereof
27 Apr 21
A wafer-level chip-scale package includes: a power semiconductor comprising a first semiconductor device formed on a semiconductor substrate, and a second semiconductor device formed on the semiconductor substrate; a common drain electrode connected to the first semiconductor device and the second semiconductor device; a first source metal bump formed on a surface of the first semiconductor device; and a second source metal bump formed on the surface of the second semiconductor device; wherein the first source metal bump, the common drain electrode, and the second source metal bump form a current path in an order of the first source metal bump, the common drain electrode, and the second source metal bump.
Myung Ho Park, Beom Su Kim, Sun Hwan Kim
Filed: 6 Jan 20
Utility
Power semiconductor module and method for manufacturing the same
30 Sep 19
A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.
Jae Sik Choi, Si Hyeon Go, Jun Young Heo, Moon Taek Sung, Dong Seong Oh
Filed: 4 Dec 17