184 patents
Utility
Switching regulator implementing power recycling
16 Jan 24
A controller for a switching regulator receiving an input voltage and generating a regulated output voltage includes a buck control circuit and a boost control circuit.
Nicholas I. Archibald, Steven P. Laur, Rhys S. A. Philbrick
Filed: 18 Mar 22
Utility
Bottom source trench MOSFET with shield electrode
9 Jan 24
An improved inverted field-effect-transistor semiconductor device and method of making thereof may comprise a source layer on a bottom and a drain disposed on a top of a semiconductor substrate and a vertical current conducting channel between the source layer and the drain controlled by a trench gate electrode disposed in a gate trench lined with an insulating material.
Sik Lui, Madhur Bobde, Lingpeng Guan, Lei Zhang
Filed: 12 Aug 21
Utility
High bandwidth constant on-time PWM control
2 Jan 24
Apparatus and associated methods relate to dynamic bandwidth control of a variable frequency modulation circuit by selective contribution of a crossover frequency tuning engine (XFTE) in response to a transient in a switching frequency.
Chris M. Young
Filed: 1 Feb 23
Utility
Semiconductor Package Having Wettable Lead Flanks and Tie Bars and Method of Making the Same
28 Dec 23
A semiconductor package includes a lead frame, a chip, and a molding encapsulation.
Yan Xun Xue, Madhur Bobde, Long-Ching Wang, Xiaoguang Zeng
Filed: 28 Jun 22
Utility
Semiconductor Package Having Smart Power Stage and E-fuse Solution
28 Dec 23
A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation.
Prabal Upadhyaya
Filed: 5 Sep 23
Utility
Power Converter for High Power Density Applications
21 Dec 23
A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation.
Ziwei Yu, Lin Chen, Zhiqiang Niu
Filed: 1 Sep 23
Utility
Circuit and method for controlling switching regulator with ultrasonic mode
19 Dec 23
A control circuit for controlling a switching regulator includes a timer, a comparator, a driver circuit and a controller.
Chi-Kuang Chang, Cheng-Hsiung Tsai
Filed: 23 Mar 22
Utility
Super Junction Power Device with Adjustable Gate Resistance Structure and Manufacturing Method Thereof
7 Dec 23
A super junction power device with an adjustable gate resistance structure and a manufacturing method thereof relate to a field of manufacturing of power devices and semiconductors.
WEI HU
Filed: 21 Aug 23
Utility
SGT Mosfet Device and Manufacturing Method of Contact Holes of SGT Mosfet Device
16 Nov 23
An SGT MOSFET device and a manufacturing method of contact holes of the SGT MOSFET device relate to a field of power semiconductor device manufacturing.
FEI PENG, YI ZHAO, LIANG SHI
Filed: 25 Jul 23
Utility
Port controller with real-time fault detection
7 Nov 23
A port controller circuit is configured to control power transfer on a power path between a first terminal and a second terminal.
Michael Scheel
Filed: 7 Feb 22
Utility
Switching Regulator Implementing Negative Current Protection
2 Nov 23
A controller for a switching regulator incorporates a protection circuit to limit the negative current to a negative current threshold while operating the switching regulator to sink current from the load without damage to the power switches.
Zhiye Zhang, Gilbert S. Z. Lee
Filed: 2 May 22
Utility
Semiconductor package having smart power stage and e-fuse solution
24 Oct 23
A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation.
Prabal Upadhyaya
Filed: 28 Dec 20
Utility
Semiconductor Power Module Package Having Lead Frame Anchored Bars
19 Oct 23
A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies.
Zhiqiang Niu, Bum-Seok Suh, Junho Lee, Jong-Mu Lee, Jun Lu, Xiaorong Ge
Filed: 18 Apr 22
Utility
Semiconductor package having thin substrate and method of making the same
10 Oct 23
A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads.
Jun Lu, Long-Ching Wang, Madhur Bobde, Bo Chen, Shuhua Zhou
Filed: 5 Oct 22
Utility
Method and circuit for sensing MOSFET temperature for load switch application
3 Oct 23
A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed.
Zhenyu Wang, Jian Yin, Lingpeng Guan, Sitthipong Angkititrakul, Christopher Ben Bartholomeusz, Xiaobin Wang
Filed: 11 Nov 21
Utility
SiC MOSFET with reduced channel length and high V
3 Oct 23
A silicon carbide MOSFET device and method for making thereof are disclosed.
David Sheridan, Arash Salemi, Madhur Bobde
Filed: 16 Feb 21
Utility
Chip Scale Package (CSP) Semiconductor Device Having Thin Substrate
28 Sep 23
A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads.
Lin Lv, Shuhua Zhou, Long-Ching Wang, Jun Lu
Filed: 23 Mar 22
Utility
Circuit and Method for Controlling Switching Regulator with Ultrasonic Mode
28 Sep 23
A control circuit for controlling a switching regulator includes a timer, a comparator, a driver circuit and a controller.
Chi-Kuang Chang, Cheng-Hsiung Tsai
Filed: 23 Mar 22
Utility
IGBT light load efficiency
12 Sep 23
An apparatus comprising an insulated gate bipolar transistor and a super junction metal-oxide semiconductor field effect transistor wherein the insulated gate bipolar transistor and the super-junction metal-oxide semiconductor field effect transistor are electrically and optionally structurally coupled.
Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan, Bum-Seok Suh
Filed: 4 May 22
Utility
Intelligent Power Module Containing Exposed Surfaces of Transistor Die Supporting Elements
7 Sep 23
An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a fourth slanted section, a fifth slanted section, and a molding encapsulation.
Zhiqiang Niu, Bum-Seok Suh, Junho Lee, Jong-Mu Lee, Xiaorong Ge
Filed: 1 Mar 22