184 patents
Page 8 of 10
Utility
Improving Igbt Light Load Efficiency
1 Apr 21
An apparatus comprising an insulated gate bipolar transistor and a super junction metal-oxide semiconductor field effect transistor wherein the insulated gate bipolar transistor and the super-junction metal-oxide semiconductor field effect transistor are electrically and optionally structurally coupled.
Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan, Bum-Seok Suh
Filed: 27 Sep 19
Utility
Fast transient response in DC-to-DC converters
23 Mar 21
A computer program product and DC-to-DC converter comprising, an electronic switching device, an inductor coupled to the electronic switching device, a capacitor coupled to the inductor wherein the inductor and capacitor are chosen such that the resistance of the load line is greater than a gain minus the equivalent series resistance.
Amir Babazadeh
Filed: 27 Mar 19
Utility
Power Semiconductor Package Having Integrated Inductor and Method of Making the Same
18 Mar 21
A power semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a first metal clip, a second metal clip, an inductor assembly, and a molding encapsulation.
Xiaotian Zhang, Mary Jane R. Alin, Bo Chen, David Brian Oraboni, JR., Long-Ching Wang
Filed: 18 Sep 19
Utility
Common Source Land Grid Array Package
18 Mar 21
A semiconductor package comprises a land grid array substrate, a first VDMOSFET, a second VDMOSFET, and a molding encapsulation.
Yan Xun Xue, Yueh-Se Ho, Long-Ching Wang, Madhur Bobde, Xiaobin Wang, Lin Chen
Filed: 18 Sep 19
Utility
Low capacitance bidirectional transient voltage suppressor
2 Mar 21
A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment.
Shekar Mallikarjunaswamy, Ning Shi
Filed: 20 Jun 19
Utility
Combined IGBT and superjunction MOSFET device with tuned switching speed
23 Feb 21
An apparatus comprising an insulated gate bipolar transistor; and a super-junction metal-oxide semiconductor field effect transistor wherein the insulated gate bipolar transistor wherein the super-junction metal-oxide semiconductor field effect transistor are structurally coupled and wherein the super-junction metal-oxide semiconductor field effect transistor is configured to switch to an ‘on’ state from an ‘off’ state and an ‘off’ state from an ‘on’ state.
Bum-Seok Suh, Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan
Filed: 27 Sep 19
Utility
Voltage-controlled oscillator for current mode hysteretic modulator
16 Feb 21
A voltage-controlled oscillator (VCO) generates a clock signal in response to an input feedback signal by applying tuning to a control loop error signal related to the input feedback signal and generating the clock signal using a voltage ramp signal that is ground referenced.
Steven P. Laur, Rhys Philbrick, Nicholas Archibald
Filed: 6 Nov 19
Utility
Switching regulator controller dynamic output voltage adjustment
16 Feb 21
A controller for a switching regulator includes an error amplifier configured to receive a feedback voltage indicative of the regulated output voltage and a reference voltage, and to generate an error signal indicative of the difference between the feedback voltage and the reference voltage; a loop calculator configured to generate an output signal in response to the error signal, the output signal being used by the switching regulator to generate the regulated output voltage having a voltage value related to the reference voltage; and an output voltage adjust circuit configured to receive a sense current signal indicative of a current flowing through the load and to generate a voltage adjust signal in response to the sense current signal, the voltage adjust signal being applied to generate the reference voltage relative to a predetermined set voltage.
Richard Schmitz, Edward Mun Lam, Daniel Edward Brown
Filed: 4 Mar 19
Utility
New Dual-gate Trench Igbt with Buried Floating P-type Shield
21 Jan 21
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.
Jun Hu, Madhur Bobde, Hamza Yilmaz
Filed: 1 Oct 20
Utility
Schottky Diode Integrated into Superjunction Power Mosfets
21 Jan 21
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure.
Yi Su, Madhur Bobde
Filed: 30 Sep 20
Utility
Device structure and manufacturing method using HDP deposited source-body implant block
19 Jan 21
This invention discloses a semiconductor power device.
Anup Bhalla, François Hébert, Sung-Shan Tai, Sik K. Lui
Filed: 27 Apr 17
Utility
Transient Voltage Supressor with a Punch-through Silicon Controlled Rectifier Low-side Steering Diode
14 Jan 21
A transient voltage suppressor (TVS) device uses a punch-through silicon controlled rectifier (SCR) structure for the low-side steering diode where the punch-through SCR structure realizes low capacitance at the protected node.
Shekar Mallikarjunaswamy
Filed: 25 Sep 20
Utility
Silicon Carbide Mosfet with Source Ballasting
14 Jan 21
A method for making an integrated device that includes a plurality of planar MOSFETs, includes forming a plurality of doped body regions in an upper portion of a silicon carbide substrate composition and a plurality of doped source regions.
Vipindas Pala
Filed: 30 Sep 20
Utility
Super-fast Transient Response (STR) Ac/dc Converter for High Power Density Charging Application
30 Dec 20
A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB.
Pei-Lun Huang, Yu-Ming Chen, Tien-Chi Lin, Jung-Pei Cheng, Yueh-Ping Yu, Zhi-Qiang Niu, Xiaotian Zhang, Long-Ching Wang
Filed: 27 Jun 19
Utility
Semiconductor Chip Integrating High and Low Voltage Devices
2 Dec 20
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon.
Hideaki Tsuchiko
Filed: 19 Aug 20
Utility
Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer
9 Nov 20
A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.
Lei Zhang, Hongyong Xue, Jian Wang, Runtao Ning
Filed: 13 Jun 18
Utility
OR-fet body brake in phase redundant scheme
9 Nov 20
A method, system and computer program product for improving inductor current ramp down times in a DC-to-DC converter having an inductor conductively coupled to a low side transistor on a first side and an or-ing transistor coupled to a second side, where the DC-to-DC converter is in a phase redundant power supply.
Prabal Upadhyaya
Filed: 27 Mar 19
Utility
System and method for extending the maximum duty cycle of a step-down switching converter without maximum duty control
9 Nov 20
The invention proposes a system and method for extending the maximum duty cycle of a step-down switching converter to nearly 100% while maintaining a constant switching frequency.
Youngbok Kim
Filed: 14 Aug 19
Utility
Slope compensation for peak current mode control modulator
9 Nov 20
A ramp signal generator generates a slope compensated ramp signal with optimal slope compensation for a current mode control modulator.
Nicholas I. Archibald, Rhys S. A. Philbrick, Steven P. Laur
Filed: 3 Dec 19
Utility
Temperature and V
9 Nov 20
A power MOSFET Rdson compensation device comprising analog circuitry receives an input signal proportional to a voltage drop across a power MOSFET, one or more base reference voltages, a voltage-dependent reference voltage, and a temperature-dependent reference voltage.
Gilbert S. Z. Lee
Filed: 11 Jul 19