184 patents
Page 9 of 10
Utility
Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode
2 Nov 20
A transient voltage suppressor (TVS) device uses a punch-through silicon controlled rectifier (SCR) structure for the high-side steering diode and/or the low-side steering diode where the punch-through SCR structure realizes low capacitance at the protected node.
Shekar Mallikarjunaswamy
Filed: 25 Oct 18
Utility
Super-fast transient response (STR) AC/DC converter for high power density charging application
26 Oct 20
A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB.
Pei-Lun Huang, Yu-Ming Chen, Tien-Chi Lin, Jung-Pei Cheng, Yueh-Ping Yu, Zhi-Qiang Niu, Xiaotian Zhang, Long-Ching Wang
Filed: 27 Jun 19
Utility
Silicon carbide MOSFET with source ballasting
26 Oct 20
An integrated device and a method for making said integrated device.
Vipindas Pala
Filed: 18 Sep 18
Utility
Schottky diode integrated into superjunction power MOSFETs
26 Oct 20
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure.
Yi Su, Madhur Bobde
Filed: 14 Dec 17
Utility
Dual-gate trench IGBT with buried floating P-type shield
12 Oct 20
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.
Jun Hu, Madhur Bobde, Hamza Yilmaz
Filed: 26 Jan 19
Utility
Phase Multipliers In Power Converters
7 Oct 20
Apparatus and associated methods relate to copying a pulse-width-modulated (PWM) signal PWMin to N-1 delay controllers to form N-1 time-interleaved PWM signals.
Prabal Upadhyaya
Filed: 2 Apr 19
Utility
Detection circuit, switching regulator having the same and control method
5 Oct 20
A detection circuit for detecting an inductor current flowing through an inductor is provided.
Bu-Wei Chen, Yueh-Ping Yu, Jung-Pei Cheng
Filed: 25 Jun 19
Utility
DC resistance sense temperature compensation
5 Oct 20
A circuit for providing temperature compensation to a sense signal having a first temperature coefficient includes a temperature compensation circuit receiving a temperature sense signal indicative of a temperature associated with the sense signal where the temperature compensation circuit is digitally configurable by at least one digital signal to generate a compensating impedance signal having a second temperature coefficient.
Rhys Philbrick, Steven P. Laur, Nicholas Archibald
Filed: 27 Jan 20
Utility
Or-fet Body Brake In Phase Redundant Scheme
30 Sep 20
A method, system and computer program product for improving inductor current ramp down times in a DC-to-DC converter having an inductor conductively coupled to a low side transistor on a first side and an or-ing transistor coupled to a second side, where the DC-to-DC converter is in a phase redundant power supply.
Prabal Upadhyaya
Filed: 27 Mar 19
Utility
FAST TRANSIENT RESPONSE IN DC-to-DC CONVERTERS
30 Sep 20
A computer program product and DC-to-DC converter comprising, an electronic switching device, an inductor coupled to the electronic switching device, a capacitor coupled to the inductor wherein the inductor and capacitor are chosen such that the resistance of the load line is greater than a gain minus the equivalent series resistance.
Amir Babazadeh
Filed: 26 Mar 19
Utility
High Surge Transient Voltage Suppressor
23 Sep 20
A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown.
Shekar Mallikarjunaswamy
Filed: 9 Jun 20
Utility
Sawtooh Electric Field Drift Region Structure for Planar and Trench Power Semiconductor Devices
23 Sep 20
A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate.
Madhur Bobde, Lingpeng Guan, Anup Bhalla, Hamza Yilmaz
Filed: 30 May 20
Utility
Process Method and Structure for High Voltage Mosfets
23 Sep 20
This invention discloses a semiconductor power device disposed in a semiconductor substrate.
Yongping Ding, Sik Lui, Madhur Bobde, Lei Zhang, Jongoh Kim, John Chen
Filed: 21 May 20
Utility
Switching Regulator Controller Configuration Parameter Optimization
16 Sep 20
A controller for a multi-phase switching regulator includes an error amplifier configured to generate an error signal indicative of the difference between a feedback voltage and a reference voltage; a loop calculator configured to generate control signals in response to the error signal to drive the power stages; and a dynamic phase management control circuit configured to generate a power efficiency value in response to the input current, the input voltage, the output current, and the output voltage.
Richard Schmitz
Filed: 12 Mar 19
Utility
Asymmetrical blocking bidirectional gallium nitride switch
14 Sep 20
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer.
David Sheridan
Filed: 30 May 19
Utility
Switching regulator controller configuration parameter optimization
14 Sep 20
A controller for a multi-phase switching regulator includes an error amplifier configured to generate an error signal indicative of the difference between a feedback voltage and a reference voltage; a loop calculator configured to generate control signals in response to the error signal to drive the power stages; and a dynamic phase management control circuit configured to generate a power efficiency value in response to the input current, the input voltage, the output current, and the output voltage.
Richard Schmitz
Filed: 12 Mar 19
Utility
Switching Regulator Controller Dynamic Output Voltage Adjustment
9 Sep 20
A controller for a switching regulator includes an error amplifier configured to receive a feedback voltage indicative of the regulated output voltage and a reference voltage, and to generate an error signal indicative of the difference between the feedback voltage and the reference voltage; a loop calculator configured to generate an output signal in response to the error signal, the output signal being used by the switching regulator to generate the regulated output voltage having a voltage value related to the reference voltage; and an output voltage adjust circuit configured to receive a sense current signal indicative of a current flowing through the load and to generate a voltage adjust signal in response to the sense current signal, the voltage adjust signal being applied to generate the reference voltage relative to a predetermined set voltage.
Richard Schmitz, Edward Mun Lam, Daniel Edward Brown
Filed: 3 Mar 19
Utility
Semiconductor chip integrating high and low voltage devices
7 Sep 20
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon.
Hideaki Tsuchiko
Filed: 13 Nov 18
Utility
Semiconductor device having one or more titanium interlayers and method of making the same
31 Aug 20
A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer.
Wei He, Chris Wiebe, Hongyong Xue
Filed: 28 Aug 19
Utility
HV converter with reduced EMI
31 Aug 20
A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip.
Zhiqiang Niu, Kuang Ming Chang, Lin Chen, Ning Sun, QiHong Huang, Tzu-Hsin Lu
Filed: 28 Aug 19