8 patents
Utility
Semi-conductor wafers longer than industry standard square
24 Jan 23
A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption.
Robertus Antonius Steeman
Filed: 23 Oct 18
Utility
High Temperature Acid Etch for Silicon
16 Sep 21
A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon.
Ralf JONCZYK, Patrick MCMAHON
Filed: 15 Mar 21
Utility
Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface
7 Sep 20
A semiconductor wafer forms on a mold containing a dopant.
Ralf Jonczyk, Brian D. Kernan, G.D. Stephen Hudelson, Adam M. Lorenz, Emanuel M. Sachs
Filed: 3 Sep 19
Utility
Semi-conductor Wafers Longer Than Industry Standard Square
5 Aug 20
A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption.
Robertus Antonius STEEMAN
Filed: 22 Oct 18
Utility
Method for maintaining contained volume of molten material from which material is depleted and replenished
27 Apr 20
A main crucible of molten semiconductor is replenished from a supply crucible maintained such that there are always two phases of solid and liquid semiconductor within the supply crucible.
Ralf Jonczyk, Richard L Wallace, David S Harvey
Filed: 27 Apr 16
Utility
Methods and apparati for handling, heating and cooling a substrate upon which a pattern is made by a tool in heat flowable material coating, including substrate transport, tool laydown, tool tensioning and tool retraction
3 Feb 20
A workpiece is transported using a porous belt, which belt delivers a workpiece to a chuck, upon which the workpiece is held by vacuum.
Emanuel M. Sachs, Peter E. Kane, Holly G. Gates, Damian W. Harris, Benjamin F. Polito, Hector A. Inirio
Filed: 21 Sep 12
Utility
Methods for Creating a Semiconductor Wafer Having Profiled Doping and Wafers and Solar Cell Components Having a Profiled Field, Such As Drift and Back Surface
25 Dec 19
A semiconductor wafer forms on a mold containing a dopant.
RALF JONCZYK, BRIAN D. KERNAN, G.D. STEPHEN HUDELSON, ADAM M. LORENZ, EMANUEL M. SACHS
Filed: 3 Sep 19
Utility
Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface
7 Oct 19
A semiconductor wafer forms on a mold containing a dopant.
Ralf Jonczyk, Brian D. Kernan, G. D. Stephen Hudelson, Adam M. Lorenz, Emanuel M. Sachs
Filed: 13 Oct 15
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