166 patents
Page 4 of 9
Utility
Memory device with shared amplifier circuitry
16 Nov 21
In some examples, a memory device may have at least a first and a second memory array.
Syed M. Alam, Thomas S. Andre
Filed: 22 Jul 19
Utility
Magnetoresistive Stack Device Fabrication Methods
4 Nov 21
A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region.
Jijun SUN
Filed: 22 Aug 19
Utility
Methods for Manufacturing Magnetoresistive Stack Devices
21 Oct 21
Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic tunnel junction (150), involves forming a transition metal layer (130) in the via by atomic layer deposition.
Sanjeev AGGARWAL, Sarin DESHPANDE, Kerry NAGEL, Santosh KARRE
Filed: 22 Aug 19
Utility
Sensing apparatus for sensing current through a conductor and methods therefor
19 Oct 21
A sensing apparatus for characterizing current flow through a conductor includes a plurality of magnetic sensors.
Angelo Ugge, Markus Schwickert, David Hayner
Filed: 13 Nov 19
Utility
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
5 Oct 21
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers.
Sanjeev Aggarwal, Kerry Nagel, Jason Janesky
Filed: 19 Feb 20
Utility
Shared spin-orbit-torque write line in a spin-orbit-torque MRAM
21 Sep 21
The present disclosure is drawn to, among other things, a magnetoresistive memory.
Syed M. Alam, Thomas Andre, Frederick Mancoff, Sumio Ikegawa
Filed: 18 Jan 19
Utility
Magnetoresistive Stack and Methods Therefor
16 Sep 21
A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region.
Renu WHIG, Sumio IKEGAWA, Jon SLAUGHTER, Michael TRAN, Jacob Wang CHENCHEN, Ganesh Kolliyil RAJAN
Filed: 29 Jul 19
Utility
Method of Integration of a Magnetoresistive Structure
9 Sep 21
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
Kerry Joseph NAGEL, Kenneth SMITH, Moazzem HOSSAIN, Sanjeev AGGARWAL
Filed: 11 May 21
Utility
Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor
7 Sep 21
Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions.
Jijun Sun, Shimon, Han-Jong Chia
Filed: 23 Jul 19
Utility
Methods of Manufacturing a Magnetic Field Sensor
26 Aug 21
A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions.
Renu WHIG, Phillip MATHER, Kenneth SMITH, Sanjeev AGGARWAL, Jon SLAUGHTER, Nicholas RIZZO
Filed: 30 Apr 21
Utility
Magnetoresistive Devices and Methods Therefor
12 Aug 21
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines.
Sumio IKEGAWA, Hamid ALMASI, SHIMON, Kerry NAGEL, Han Kyu LEE
Filed: 6 Feb 20
Utility
Spin orbit torque magnetoresistive devices and methods therefor
10 Aug 21
Spin-orbit-torque (SOT) lines are provided near free regions in magnetoresistive devices that include magnetic tunnel junctions.
Jijun Sun
Filed: 5 Apr 19
Utility
Structures and methods for shielding magnetically sensitive components
10 Aug 21
Structures and methods are disclosed for shielding magnetically sensitive components.
Wenchin Lin, Jason Janesky
Filed: 16 Mar 18
Utility
Magnetoresistive Devices and Methods Therefor
29 Jul 21
The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions.
SHIMON
Filed: 23 Jan 20
Utility
Bipolar Chopping for 1/F Noise and Offset Reduction In Magnetic Field Sensors
1 Jul 21
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal ENGEL, Phillip G. MATHER
Filed: 12 Jan 21
Utility
Method of manufacturing a magnetoresistive device
22 Jun 21
A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region.
Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 26 Nov 19
Utility
Method of integration of a magnetoresistive structure
8 Jun 21
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
Kerry Joseph Nagel, Kenneth H. Smith, Moazzem Hossain, Sanjeev Aggarwal
Filed: 19 Nov 18
Utility
Methods of manufacturing a magnetic field sensor
1 Jun 21
A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions.
Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
Filed: 21 Mar 19
Utility
Magnetic Memory Using Spin-orbit Torque
27 May 21
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong CHIA
Filed: 2 Feb 21
Utility
Magnetoresistive devices and methods therefor
11 May 21
A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region.
Sanjeev Aggarwal, Jijun Sun
Filed: 26 Apr 19