76 patents
Page 3 of 4
Utility
Magnetoresistive Devices and Methods Therefor
12 Aug 21
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines.
Sumio IKEGAWA, Hamid ALMASI, SHIMON, Kerry NAGEL, Han Kyu LEE
Filed: 6 Feb 20
Utility
Magnetoresistive Devices and Methods Therefor
29 Jul 21
The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions.
SHIMON
Filed: 23 Jan 20
Utility
Bipolar Chopping for 1/F Noise and Offset Reduction In Magnetic Field Sensors
1 Jul 21
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal ENGEL, Phillip G. MATHER
Filed: 12 Jan 21
Utility
Magnetic Memory Using Spin-orbit Torque
27 May 21
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong CHIA
Filed: 2 Feb 21
Utility
Magnetoresistive Stacks with an Unpinned, Fixed Synthetic Anti-ferromagnetic Structure and Methods of Manufacturing Thereof
6 May 21
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
Filed: 14 Dec 20
Utility
Methods of Forming Magnetoresistive Devices and Integrated Circuits
22 Apr 21
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Thomas ANDRE, Sarin A. DESHPANDE
Filed: 28 Dec 20
Utility
Method of Fabricating a Magnetoresistive Bit from a Magnetoresistive Stack
22 Apr 21
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Sarin A. DESHPANDE
Filed: 2 Dec 20
Utility
Magnetoresistive Devices and Methods of Fabricating Such Devices
18 Mar 21
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices.
Sanjeev AGGARWAL, Kerry Joseph NAGEL
Filed: 17 Sep 19
Utility
Magnetic Field Sensor with Increased SNR
30 Dec 20
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing.
Phillip G. MATHER, Anuraag MOHAN
Filed: 15 Sep 20
Utility
Method of Manufacturing Integrated Circuit Using Encapsulation During an Etch Process
25 Nov 20
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls.
Sanjeev AGGARWAL, Sarin A. DESHPANDE, Kerry Joseph NAGEL
Filed: 9 Aug 20
Utility
Magnetoresistive Devices and Methods Therefor
28 Oct 20
A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region.
Sanjeev AGGARWAL, Jijun SUN
Filed: 25 Apr 19
Utility
Magnetoresistive Devices and Methods Therefor
14 Oct 20
A method of manufacturing a magnetoresistive device may include forming a first ferromagnetic region, forming an intermediate region on or above the first ferromagnetic region.
Jijun SUN
Filed: 9 Apr 19
Utility
Magnetoresistive Stacks with an Unpinned, Fixed Synthetic Anti-ferromagnetic Structure and Methods of Manufacturing Thereof
16 Sep 20
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
Filed: 1 Jun 20
Utility
Methods of Forming Magnetoresistive Devices and Integrated Circuits
9 Sep 20
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Thomas ANDRE, Sarin A. DESHPANDE
Filed: 21 May 20
Utility
Method of Fabricating a Magnetoresistive Bit from a Magnetoresistive Stack
9 Sep 20
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Sarin A. DESHPANDE
Filed: 21 May 20
Utility
Magnetoresistive Stack with Seed Region and Method of Manufacturing the Same
19 Aug 20
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s).
Jijun SUN, Sanjeev AGGARWAL, Han-Jong CHIA, Jon M. SLAUGHTER, Renu WHIG
Filed: 7 May 20
Utility
Magnetoresistive Stack/structure and Method of Manufacturing Same
29 Jul 20
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer. (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
Sarin A. DESHPANDE, Kerry Joseph NAGEL, Chaitanya MUDIVARTHI, Sanjeev AGGARWAL
Filed: 9 Apr 20
Utility
Magnetoresistive Stack/structure and Methods Therefor
22 Jul 20
The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices.
Sumio IKEGAWA, Han Kyu LEE, Sanjeev AGGARWAL, Jijun SUN, Syed M. ALAM, Thomas ANDRE
Filed: 15 Jan 20
Utility
Shared Spin-orbit-torque Write Line In a Spin-orbit-torque Mram
22 Jul 20
The present disclosure is drawn to, among other things, a magnetoresistive memory.
Syed M. ALAM, Thomas ANDRE, Frederick MANCOFF, Sumio IKEGAWA
Filed: 17 Jan 19
Utility
Magnetic Memory Using Spin-orbit Torque
24 Jun 20
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong Chia
Filed: 1 Mar 20