89 patents
Page 2 of 5
Utility
Magnetoresistive devices and methods therefor
1 Mar 22
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines.
Sumio Ikegawa, Hamid Almasi, Shimon, Kerry Nagel, Han Kyu Lee
Filed: 6 Feb 20
Utility
Magnetoresistive devices and methods of fabricating such devices
28 Dec 21
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices.
Sanjeev Aggarwal, Kerry Joseph Nagel
Filed: 17 Sep 19
Utility
Magnetoresistive stack/structure including metal insertion substance
30 Nov 21
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
Sumio Ikegawa
Filed: 9 Jul 18
Utility
Magnetoresistive stack/structure and method of manufacturing same
30 Nov 21
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer. (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
Sarin A. Deshpande, Kerry Joseph Nagel, Chaitanya Mudivarthi, Sanjeev Aggarwal
Filed: 10 Apr 20
Utility
Memory device with shared amplifier circuitry
16 Nov 21
In some examples, a memory device may have at least a first and a second memory array.
Syed M. Alam, Thomas S. Andre
Filed: 22 Jul 19
Utility
Sensing apparatus for sensing current through a conductor and methods therefor
19 Oct 21
A sensing apparatus for characterizing current flow through a conductor includes a plurality of magnetic sensors.
Angelo Ugge, Markus Schwickert, David Hayner
Filed: 13 Nov 19
Utility
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
5 Oct 21
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers.
Sanjeev Aggarwal, Kerry Nagel, Jason Janesky
Filed: 19 Feb 20
Utility
Shared spin-orbit-torque write line in a spin-orbit-torque MRAM
21 Sep 21
The present disclosure is drawn to, among other things, a magnetoresistive memory.
Syed M. Alam, Thomas Andre, Frederick Mancoff, Sumio Ikegawa
Filed: 18 Jan 19
Utility
Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor
7 Sep 21
Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions.
Jijun Sun, Shimon, Han-Jong Chia
Filed: 23 Jul 19
Utility
Structures and methods for shielding magnetically sensitive components
10 Aug 21
Structures and methods are disclosed for shielding magnetically sensitive components.
Wenchin Lin, Jason Janesky
Filed: 16 Mar 18
Utility
Spin orbit torque magnetoresistive devices and methods therefor
10 Aug 21
Spin-orbit-torque (SOT) lines are provided near free regions in magnetoresistive devices that include magnetic tunnel junctions.
Jijun Sun
Filed: 5 Apr 19
Utility
Method of manufacturing a magnetoresistive device
22 Jun 21
A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region.
Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 26 Nov 19
Utility
Method of integration of a magnetoresistive structure
8 Jun 21
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
Kerry Joseph Nagel, Kenneth H. Smith, Moazzem Hossain, Sanjeev Aggarwal
Filed: 19 Nov 18
Utility
Methods of manufacturing a magnetic field sensor
1 Jun 21
A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions.
Renu Whig, Phillip Mather, Kenneth Smith, Sanjeev Aggarwal, Jon Slaughter, Nicholas Rizzo
Filed: 21 Mar 19
Utility
Magnetoresistive devices and methods therefor
11 May 21
A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region.
Sanjeev Aggarwal, Jijun Sun
Filed: 26 Apr 19
Utility
Stacked magnetoresistive structures and methods therefor
11 May 21
A magnetoresistive device may include a first plurality of magnetic tunnel junction (MTJ) bits arranged in a first XY plane, and a second plurality of MTJ bits arranged in a second XY plane that is spaced apart from the first XY plane in a Z direction.
Kerry Nagel, Sanjeev Aggarwal
Filed: 5 Sep 19
Utility
Magnetoresistive stacks and methods therefor
6 Apr 21
A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers.
Sanjeev Aggarwal, Kevin Conley, Sarin A. Deshpande
Filed: 11 Jan 19
Utility
Apparatus and methods for integrating magnetoresistive devices
16 Mar 21
An integrated circuit device includes a memory portion and a logic portion.
Kerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 8 Nov 18
Utility
Magnetic memory using spin-orbit torque
2 Mar 21
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong Chia
Filed: 2 Mar 20
Utility
Bipolar chopping for 1/f noise and offset reduction in magnetic field sensors
23 Feb 21
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal Engel, Phillip G. Mather
Filed: 20 Mar 19