2134 patents
Utility
Semiconductor Device
18 Jan 24
A semiconductor device includes a first semiconductor unit that includes a first substrate including a first wiring board to which a first semiconductor chip is bonded, a second semiconductor unit that includes a second substrate including a second wiring board to which a second semiconductor chip is bonded, a cooling unit including a first cooling surface and a second cooling surface that are opposite to each other and respectively have the first semiconductor unit facing the first substrate thereon and the second semiconductor unit facing the second substrate thereon, and an output terminal provided at a first side of the cooling unit and being connected to both the first wiring board and the second wiring board.
Sota YAMAGUCHI
Filed: 25 May 23
Utility
Semiconductor Module and Method for Manufacturing Semiconductor Module
18 Jan 24
A semiconductor module includes a stacked substrate includes an insulating plate and first and second circuit boards arranged on the insulating plate, a semiconductor element arranged on the first circuit board, and a metal wiring board having a first bonding portion bonded to an upper surface of the semiconductor element via a first bonding material.
Yoko NAKAMURA, Akihiko IWAYA, Mai SAITO, Tsubasa WATAKABE
Filed: 29 Sep 23
Utility
Semiconductor Device
18 Jan 24
A semiconductor device includes a main semiconductor region and a current detecting region.
Keishirou KUMADA
Filed: 31 May 23
Utility
Silicon Carbide Semiconductor Device
18 Jan 24
P++-type contact regions are disposed apart from one another, and in a p−-type base region, at least hole current regions directly beneath the contact regions have an impurity concentration of not more than 5×1016/cm3.
Takashi TSUJI
Filed: 30 May 23
Utility
Semiconductor Device
18 Jan 24
Provided is a semiconductor device having transistor and diode sections.
Tomoyuki OBATA, Soichi YOSHIDA, Tetsutaro IMAGAWA, Seiji MOMOTA
Filed: 27 Sep 23
Utility
Silicon Carbide Semiconductor Device
18 Jan 24
In an intermediate region between an active region and an edge termination region, on a front surface of a semiconductor substrate, a gate polysilicon wiring layer is provided via an insulating layer in which a gate insulating film and a field oxide film are stacked sequentially.
Tomohiro MORIYA
Filed: 27 Sep 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
18 Jan 24
A silicon carbide semiconductor device has an active region, a first-conductivity-type region, and an edge termination region.
Yuichi HASHIZUME
Filed: 29 May 23
Utility
Integrated Circuit and Power Supply Circuit
18 Jan 24
An integrated circuit for a power supply circuit.
Yoshinori KOBAYASHI
Filed: 22 May 23
Utility
Semiconductor Apparatus
18 Jan 24
A semiconductor apparatus includes a semiconductor module, a substrate having a control unit that controls an operation of the semiconductor module, a busbar that allows a current to flow through the semiconductor module, and a shield arranged between at least respective opposing surfaces of the control unit and the busbar that oppose to each other.
Akihiro OSAWA
Filed: 27 Feb 23
Utility
Semiconductor device
16 Jan 24
A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal.
Yuichi Hashizume, Keishirou Kumada, Yoshihisa Suzuki, Yasuyuki Hoshi
Filed: 27 Mar 19
Utility
Switching control circuit and resonant converter
16 Jan 24
A switching control circuit controls switching of a switching device, which controls a resonance current of a resonant converter, with a frequency corresponding to an output voltage of the resonant converter.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 26 Jan 22
Utility
Semiconductor Module and Method of Manufacturing Semiconductor Module
11 Jan 24
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, and contains nickel or copper, an entire back surface of the bonding layer being electrically connected to and in direct contact with an electrode in the semiconductor device; an anti-oxidation layer disposed on the bonding layer; and a protective layer disposed directly on a top surface of a peripheral portion of the bonding layer on which the anti-oxidation layer is absent, covering an outer peripheral edge of the bonding layer, wherein the protective layer is made of an electrically insulating resin.
Yasuaki HOZUMI
Filed: 20 Sep 23
Utility
Pressure Detection Device and Manufacturing Method
11 Jan 24
Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.
Yuichi ITO, Mutsuo NISHIKAWA
Filed: 24 May 23
Utility
Silicon Carbide Semiconductor Device
11 Jan 24
Between the front surface of a semiconductor substrate and an n−-type drift region, a p++-type contact region, a p-type base region, a p+-type high-concentration region, and an n-type current spreading region are provided directly beneath a gate pad, sequentially from a front side of the semiconductor substrate so as to face an entire surface of a gate pad, via a field oxide film.
Shinichiro MATSUNAGA
Filed: 26 May 23
Utility
Semiconductor Device
11 Jan 24
There is provided a semiconductor device that includes a diode portion, the semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; an anode region of a second conductivity type provided to be closer to a front surface side of the semiconductor substrate than the drift region; and a trench contact portion provided at a front surface of the semiconductor substrate in the diode portion, in which in a depth direction of the semiconductor substrate, a doping concentration of the anode region at a same depth as that of a bottom portion of the trench contact portion is 1E16 cm−3 or more and 1E17 cm−3 or less.
Kazuki KAMIMURA, Toshiyuki MATSUI, Tatsuya NAITO
Filed: 24 May 23
Utility
Insulated-gate Semiconductor Device and Method of Manufacturing the Same
11 Jan 24
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji OKUMURA
Filed: 20 Sep 23
Utility
Semiconductor Device
11 Jan 24
A semiconductor device is provided, including: a semiconductor substrate; a first-conductivity-type drift region provided in the semiconductor substrate; a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction; a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion; and a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction.
Tatsuya NAITO
Filed: 20 Sep 23
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
11 Jan 24
A diode formed by a polysilicon layer is disposed between a field oxide film and an interlayer insulating film, in a semiconductor substrate, at a front surface of the semiconductor substrate.
Hiroyuki MIYASHITA, Masayuki MOMOSE, Kazutoshi SUGIMURA, Kenji KOJIMA
Filed: 30 May 23
Utility
Power Conversion Apparatus and Bidirectional Switch
11 Jan 24
A bidirectional switch, having: a first silicon carbide transistor; a first diode which is provided in series with the first silicon carbide transistor, and of which on voltage is lower than that of a built-in diode of the first silicon carbide transistor at a rated current of the bidirectional switch; a second silicon carbide transistor provided in parallel with the first diode; a second diode which is provided in series with the second silicon carbide transistor and in parallel with the first silicon carbide transistor, and of which on voltage is lower than that of a built-in diode of the second silicon carbide transistor at the rated current of the bidirectional switch; and a connection line which connects a first connection point between the first silicon carbide transistor and the first diode, and a second connection point between the second silicon carbide transistor and the second diode, is provided.
Manabu TAKEI
Filed: 22 Sep 23
Utility
Semiconductor Device
11 Jan 24
An object of the present invention is to provide a semiconductor device capable of suppressing loss in a switching element at high temperature without increasing radiation noise of the switching element.
Yuki KUMAZAWA
Filed: 26 Sep 23