2134 patents
Page 4 of 107
Utility
Semiconductor Device
30 Nov 23
A semiconductor device encompasses a mounting member having a copper-based wiring layer; first covering layer which contains nickel, covering the wiring layer so that a part of upper surface of the wiring layer is exposed in opening; joint layer metallurgically joined to the wiring layer in the opening; second covering layer which contains nickel, metallurgically joined to the joint layer on upper surface of the joint layer; semiconductor chip having bottom surface covered with the second covering layer.
Fumihiko MOMOSE, Hirohisa OYAMA, Yasuaki HOZUMI
Filed: 24 Apr 23
Utility
Fluid Measurement System and Fluid Measurement Method
30 Nov 23
A fluid measurement system includes a first sensor and a second sensor disposed on a same pipe and spaced apart from each other by a predetermined distance; and a measurement controller configured to calculate a flow velocity of a fluid flowing through the pipe based on first output that is output from the first sensor and second output that is output from the second sensor.
Naomichi JIMBO, Naoki TAKEDA
Filed: 14 Mar 23
Utility
Silicon Carbide Semiconductor Device
30 Nov 23
An active region has, in a periphery thereof, a p-type outer peripheral region that has sequentially from a front surface of a semiconductor substrate, a p++-type contact extension portion, a p-type base extension portion, and an upper portion and a lower portion of a p+-type extension portion, so as to form, at an outer end portion thereof, steps that are recessed stepwise toward a center of the active region and that in a depth direction, are arranged in ascending order of proximity thereof to the center.
Yasuyuki HOSHI
Filed: 31 Mar 23
Utility
Terminal Structure, Method for Manufacturing Terminal Structure, and Semiconductor Apparatus
30 Nov 23
A terminal structure includes a pair of plate sections including first and second plate sections respectively provided spaced apart from each other in a thickness direction of the nut, a connection plate section extending in the thickness direction of the nut and connects respective one ends of the pair of plate sections to each other, a terminal section protruding from the other end of the first plate section of the pair of plate sections and faces the connection plate section, and a holding section provided at at least one of the connection plate section or the terminal section, and restricting rotation of the nut and movement of the nut in a direction intersecting the thickness direction.
Tadahiko SATO
Filed: 16 Mar 23
Utility
Silicon Carbide Semiconductor Device
30 Nov 23
A semiconductor device having, in an outer peripheral portion of an active region, and in a depth direction from a front surface of a semiconductor substrate, first to fourth outer peripheral regions, to thereby form steps that are recessed stepwise toward the center of the semiconductor device by a same width, and are arranged in an ascending order of the proximity to the center in the depth direction.
Yasuyuki HOSHI
Filed: 31 Mar 23
Utility
Drive Circuit of Switching Element and Intelligent Power Module
30 Nov 23
A gate drive circuit 22A, in order to cause an IGBT 211a in a semiconductor elements 21u to switch to the ON state according to the signal level of an input signal SinUH, includes a constant current supply unit 223uA configured to supply constant current to the gate G of the IGBT 211a, a switching signal input terminal Tsw4 to which a switching signal Ssw4 is input, a signal level determination unit 226uA configured to determine a signal level of the switching signal Ssw4, and a drive capability switching unit 224uA configured to, by changing a current amount of constant current output from the constant current supply unit 223uA, based on a determination result in the signal level determination unit 226uA and a signal level of the input signal SinUL, switch the drive capability of the constant current supply unit 223uA.
Eiji KUROSAWA
Filed: 27 Mar 23
Utility
Nitride Semiconductor Device
30 Nov 23
Tsurugi KONDO, Katsunori UENO, Shinya TAKASHIMA, Ryo TANAKA
Filed: 8 Mar 23
Utility
Semiconductor device and fabrication method thereof
28 Nov 23
In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor.
Motoyoshi Kubouchi, Soichi Yoshida
Filed: 11 May 21
Utility
Semiconductor device and method for fabricating semiconductor device
28 Nov 23
Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode.
Kaname Mitsuzuka, Yuichi Onozawa
Filed: 24 Dec 20
Utility
Nitride semiconductor device
28 Nov 23
A nitride semiconductor device includes a GaN-based semiconductor layer; and an insulating film provided on a first surface of the GaN-based semiconductor layer, the insulating film containing O atoms, and other constituent atoms other than O.
Yuki Ohuchi, Katsunori Ueno
Filed: 26 Feb 21
Utility
Semiconductor Device
23 Nov 23
A semiconductor device having a semiconductor chip and a control circuit.
Yuki KUMAZAWA
Filed: 30 Mar 23
Utility
Semiconductor Device
23 Nov 23
Provided is a semiconductor device including: a collector region of a second conductivity type, which is provided between a drift region and a lower surface of a semiconductor substrate, in which the collector region includes a first region and a second region having a lower implantation efficiency of carriers with respect to the drift region than the first region, and when an area of the first region and an area of the second region per unit area of the collector region in a top view are respectively represented by S1 and S2, the implantation efficiency of the first region is represented by η1, and the implantation efficiency of the second region is represented by η2, an average implantation efficiency ηC given by an expression below is 0.1 or more and 0.4 or less: ηC=(S1×η1+S2×η2)/(S1+S2).
Tohru SHIRAKAWA, Kaname MITSUZUKA
Filed: 24 Apr 23
Utility
Semiconductor Device
23 Nov 23
A semiconductor device includes: a semiconductor substrate; a first insulating film provided on one surface of the semiconductor substrate; a first resistance layer including polysilicon provided on the first insulating film; a second insulating film provided on the first resistance layer; a second resistance layer including polysilicon provided on the second insulating film so as to overlap with the first resistance layer; a third insulating film provided on the second resistance layer; a first electrode provided over the third insulating film and electrically connected to the second resistance layer; and a second electrode electrically connected to the first resistance layer, wherein the first resistance layer and the second resistance layer each include a body part and a first contact part having a higher impurity concentration than the body part, and the respective first contact parts are in contact with each other.
Taichi KARINO, Hitoshi SUMIDA
Filed: 27 Mar 23
Utility
Semiconductor device and method for manufacturing the same
21 Nov 23
A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate.
Yuichi Onozawa
Filed: 11 Dec 20
Utility
Semiconductor device and semiconductor device manufacturing method
21 Nov 23
Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.
Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Misaki Meguro, Motoyoshi Kubouchi, Naoko Kodama
Filed: 17 Jan 22
Utility
Semiconductor module and method of manufacturing semiconductor module
21 Nov 23
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki Hozumi
Filed: 25 May 22
Utility
Silicon carbide semiconductor device
21 Nov 23
A silicon carbide semiconductor device includes silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a trench, a gate insulating film, a gate electrode, and an interlayer insulating film.
Masaki Miyazato
Filed: 31 Aug 21
Utility
Semiconductor module
21 Nov 23
A semiconductor module, including a cooler having first and second flow passages respectively formed on first and second sides of the semiconductor module that are opposite to each other, and a third flow passage connecting the first and second flow passages.
Yushi Sato
Filed: 26 Aug 20
Utility
Semiconductor device with switching element protection
21 Nov 23
The present invention is directed to provide a semiconductor device capable of protecting a switching element even though having a capacitor connected to a control signal input terminal of the switching element.
Yuki Kumazawa
Filed: 23 Jul 21
Utility
Semiconductor Device and Fabrication Method for Semiconductor Device
16 Nov 23
A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions.
Motoyoshi KUBOUCHI, Kosuke YOSHIDA, Soichi YOSHIDA, Koh YOSHIKAWA, Nao SUGANUMA
Filed: 14 Jul 23