2134 patents
Page 8 of 107
Utility
Semiconductor Device
21 Sep 23
There is provided a semiconductor device that includes a transistor portion and a diode portion, the semiconductor device including a drift region, a base region, an emitter region, and a plurality of trench portions, in which the transistor portion has a boundary region provided to be adjacent to the diode portion, a lifetime control region is provided from the diode portion, across the boundary region, to the transistor portion provided with the emitter region, in an array direction of the plurality of trench portions, the boundary region has a plug region of a second conductivity type which is provided to extend in an extension direction of the plurality of trench portions and which has a doping concentration higher than that of the base region, and a contact region and the base region are alternately arranged in the extension direction, at a front surface in the boundary region.
Soichi YOSHIDA
Filed: 21 May 23
Utility
Silicon Carbide Semiconductor Device
21 Sep 23
A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate electrodes provided via a gate insulating film, second semiconductor regions of the second conductivity type underlying the trenches, third semiconductor regions of the second conductivity type between adjacent trenches, a first electrode, and a second electrode.
Shinichiro MATSUNAGA
Filed: 26 Jan 23
Utility
Semiconductor Device
21 Sep 23
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface and provided with a drift region of a first conductivity type; and a buffer region provided between the drift region and the lower surface and having a higher doping concentration than the drift region.
Yuki KARAMOTO, Kaname MITSUZUKA
Filed: 22 Feb 23
Utility
Switching Control Circuit and Power Supply Circuit
21 Sep 23
A switching control circuit for a power supply circuit that includes an inductor configured to receive a rectified voltage corresponding to an alternating current (AC) voltage, and a transistor configured to control a current flowing through the inductor, the power supply circuit generating an output voltage from the AC voltage, the switching control circuit being configured to switch the transistor.
Ryuunosuke ARAUMI, Ryuji YAMADA
Filed: 24 Feb 23
Utility
Integrated circuit and power supply circuit
19 Sep 23
A power supply circuit that generates an output voltage from an AC voltage inputted thereto.
Takato Sugawara
Filed: 25 May 21
Utility
Switching control circuit and power factor correction circuit
19 Sep 23
A switching control circuit for a power supply circuit that generates an output voltage from an AC voltage.
Ryuji Yamada, Ryuunosuke Araumi
Filed: 28 Oct 21
Utility
Laser Gas Analyzer
14 Sep 23
A laser gas analyzer includes a light emitting unit including a laser element configured to emit laser light having a target wavelength band including a wavelength of an absorption line spectrum of the target gas, and a modulated light generation unit configured to supply a drive current to the laser element so that the laser element sweeps and modulates the laser light to have the target wavelength band, and a light receiving unit including a light receiving element configured to receive the laser light passing through the target space and output a detection signal, and a light reception signal processing unit configured to analyze the target gas according to the detection signal from the light receiving element.
Naoki TAKEDA, Ikumi YOSHIMINE
Filed: 30 Jan 23
Utility
Semiconductor Module, Semiconductor Device and Vehicle
14 Sep 23
A semiconductor module includes: a wiring board including a ceramic substrate and conductor patterns on a first surface of the ceramic substrate; a semiconductor element arranged on at least one of the conductor patterns on the first surface of the ceramic substrate; a sealing insulator that seals the wiring board and the semiconductor element; and an insulating member disposed on the first surface of the ceramic substrate in a gap between the conductor patterns that are adjacent to each other, the insulating member extending in an extending direction of the gap and dividing an area in the gap where the sealing insulator fills the gap so that the insulating member is separate from respective edges of the conductor patterns adjacent to each other.
Tomoyuki WAKIYAMA
Filed: 2 Feb 23
Utility
Semiconductor Device
14 Sep 23
A drift layer has a SJ structure with a parallel pn layer; an n+-type buffer layer is between the parallel pn layer and an n++-type drain layer.
Noriaki YAO, Yuji KUMAGAI
Filed: 27 Jan 23
Utility
Silicon Carbide Semiconductor Device
14 Sep 23
A semiconductor device including a semiconductor substrate; a first parallel pn layer in which first first-conductivity-type column regions and first second-conductivity-type column regions repeatedly alternate with one another in an active region; a second parallel pn layer in which second first-conductivity-type column regions and second second-conductivity-type column regions repeatedly alternate with one another, in a termination region; a device structure provided between the first main surface of the semiconductor substrate and the first parallel pn layer; a first electrode provided at the first main surface and electrically connected to the device structure; and a second electrode provided at the second main surface of the semiconductor substrate.
Syunki NARITA, Shinsuke HARADA
Filed: 27 Feb 23
Utility
Power Conversion Device and DC-DC Converter Device
14 Sep 23
The power conversion device includes: a DC-DC converter unit including a transformer having a coil substrate where a primary side coil is formed and a bus bar forming a secondary side coil, and converting a voltage of DC power input from a DC power supply into a different voltage; and a cooling portion where a cooling flow path through which a cooling liquid flows is provided and the DC-DC converter unit is disposed.
Shun FUKUCHI
Filed: 23 Jan 23
Utility
Semiconductor device and method for manufacturing the same
12 Sep 23
A semiconductor device, including a semiconductor module and a conducting board.
Motoyoshi Kubouchi
Filed: 30 Sep 20
Utility
Sensor System and Method for Measuring Gas Liquid Ratio
7 Sep 23
A sensor system for measuring a gas liquid ratio of a two-phase fluid that flows through a pipe is provided.
Naomichi JIMBO, Naoki TAKEDA
Filed: 24 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device includes an elongated cooler through which a refrigerant flows; a plurality of semiconductor modules, each including one or more semiconductor elements; and a passive element configured to drive the plurality of semiconductor modules, the cooler includes a first cooling surface; and a second cooling surface opposing the first cooling surface, the plurality of semiconductor modules is arrayed in a longitudinal direction of the cooler and is coupled to, or is in contact with, the first cooling surface, and the passive element is coupled to, or is in contact with, the second cooling surface.
Ginji UCHIBE, Yuji SUZUKI
Filed: 30 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device includes a semiconductor chip that has a first main electrode on a rear surface thereof and a second main electrode on a front surface thereof, and a wiring layer electrically connected to at least one of the first main electrode or the second main electrode.
Sota YAMAGUCHI
Filed: 25 Jan 23
Utility
Semiconductor Joining, Semiconductor Device
7 Sep 23
The present invention provides a joining that suppresses ion migration and also has excellent corrosion resistance, high bonding strength, and high reliability at the joining, and a semiconductor device.
Yoshinori UEZATO, Masanori TAKAZAWA, Shoichiro SAKAI
Filed: 26 Jan 23
Utility
Semiconductor Device Manufacturing Method
7 Sep 23
When a semiconductor unit is heated, a heater having a flat heating surface is used for performing heating in a state in which a lower surface of an insulated circuit board is placed on the heating surface.
Hiroki TAKAHASHI, Tsunehiro NAKAJIMA, Takashi SAITO
Filed: 25 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device including a semiconductor unit that has a first arm part, which includes: first and second semiconductor chips having first and second control electrodes on their front surfaces, a first circuit pattern where the first and second semiconductor chips are disposed, a second circuit pattern to which the first and second control electrodes are connected, and a first control wire electrically connecting the first and second control electrodes and the second circuit pattern sequentially in a direction; and a second arm part, which includes third and fourth semiconductor chips having third and fourth control electrodes on their front surfaces, a third circuit pattern where the third and fourth semiconductor chips are disposed, a fourth circuit pattern to which the third and fourth control electrodes are connected, and a second control wire electrically connecting the third and fourth control electrodes and the fourth circuit pattern sequentially in the direction.
Mitsuhiro KAKEFU, Hiroaki ICHIKAWA
Filed: 12 May 23
Utility
Semiconductor Module
7 Sep 23
A semiconductor module, including a first main wiring line connecting portion and a second main wiring line connecting portion, and a main output wiring line connecting portion is provided.
Ryo NOMAGUCHI, Takahito HARADA
Filed: 23 Jan 23
Utility
Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Substrate
7 Sep 23
An n+-type SiC substrate constituting an n+-type drain region contains a concentration of nitrogen, which is a donor, within a predetermined range (predetermined impurity concentration of the n+-type drain region) and, as impurities other than the nitrogen, contains boron, aluminum, and titanium such that a sum of respective concentrations of the boron, aluminum, and titanium is an amount that does not affect the n-type impurity concentration of the n+-type SiC substrate (impurity concentration of the n+-type drain region).
Makoto UTSUMI, Masaki MIYAZATO
Filed: 27 Jan 23