25 patents
Utility
Double-sided Cooling Package for Double-sided, Bi-directional Junction Transistor
30 Nov 23
A double-sided cooling package for a double-sided, bi-directional junction transistor can include a double-sided, bi-directional, junction transistor chip with an individual, double-sided, bi-directional power switch (collectively, a DSTA).
Jiankang BU, Robert Daniel BRDAR
Filed: 22 May 23
Utility
Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
31 Oct 23
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza Mojab
Filed: 19 Nov 21
Utility
Layout to reduce current crowding at endpoints
3 Oct 23
Layout to reduce current crowding at endpoints.
Richard A. Blanchard, Alireza Mojab
Filed: 10 Nov 21
Utility
Ruggedized Symmetrically Bidirectional Bipolar Power Transistor
21 Sep 23
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions.
Richard A. BLANCHARD, William C. ALEXANDER
Filed: 24 May 23
Utility
Ruggedized symmetrically bidirectional bipolar power transistor
11 Jul 23
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions.
Richard A. Blanchard, William C. Alexander
Filed: 17 Jun 21
Utility
Systems and methods for bidirectional device fabrication
25 Apr 23
Methods and systems for double-sided semiconductor device fabrication.
Richard A. Blanchard, William C. Alexander
Filed: 3 Oct 18
Utility
Method and System of Operating a Bi-directional Double-base Bipolar Junction Transistor (B-tran)
2 Mar 23
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza MOJAB, Daniel BRDAR, Ruiyang YU
Filed: 9 Nov 22
Utility
System and Method for Bi-directional Trench Power Switches
16 Feb 23
Bi-directional trench power switches.
Jiankang BU, Constantin BULUCEA, Alireza MOJAB, Jeffrey KNAPP, Robert Daniel BRDAR
Filed: 10 Aug 22
Utility
Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
6 Dec 22
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza Mojab, Daniel Brdar, Ruiyang Yu
Filed: 30 Nov 21
Utility
Method and system of current sharing among bidirectional double-base bipolar junction transistors
8 Nov 22
Current sharing among bidirectional double-base bipolar junction transistors.
Alireza Mojab
Filed: 7 Jun 21
Utility
CorrectedSystems and Methods for Bidirectional Device Fabrication
18 Aug 22
Methods and systems for double-sided semiconductor device fabrication.
Richard A. Blanchard, William C. Alexander
Filed: 3 Oct 18
Utility
Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
9 Aug 22
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza Mojab
Filed: 11 May 21
Utility
Method and System of Operating a Bi-directional Double-base Bipolar Junction Transistor (B-tran)
16 Jun 22
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza MOJAB, Daniel BRDAR
Filed: 30 Nov 21
Utility
Method and System of Operating a Bi-directional Double-base Bipolar Junction Transistor (B-tran)
10 Mar 22
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza MOJAB
Filed: 19 Nov 21
Utility
Method and System of Current Sharing Among Bidirectional Double-base Bipolar Junction Transistors
9 Dec 21
Current sharing among bidirectional double-base bipolar junction transistors.
Alireza MOJAB
Filed: 7 Jun 21
Utility
Method and System of Operating a Bi-directional Double-base Bipolar Junction Transistor (B-tran)
18 Nov 21
Operating a bi-directional double-base bipolar junction transistor (B-TRAN).
Alireza MOJAB
Filed: 11 May 21
Utility
Ruggedized Symmetrically Bidirectional Bipolar Power Transistor
7 Oct 21
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions.
Richard A. BLANCHARD, William C. ALEXANDER
Filed: 17 Jun 21
Utility
Ruggedized symmetrically bidirectional bipolar power transistor
20 Jul 21
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions.
Richard A. Blanchard, William C. Alexander
Filed: 25 May 17
Utility
Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
12 Jan 21
Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion.
William C. Alexander, Richard A. Blanchard
Filed: 27 Jan 20
Utility
Field Plates on Two Opposed Surfaces of Double-Base Bidirectional Bipolar Transistor: Devices, Methods, and Systems
29 Jul 20
Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion.
William C. Alexander, Richard A. Blanchard
Filed: 26 Jan 20