157 patents
Page 2 of 8
Utility
BAW resonators with antisymmetric thick electrodes
4 Jul 23
A resonator circuit device.
Dae Ho Kim, Mary Winters, Zhiqiang Bi
Filed: 22 Dec 20
Utility
5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit
27 Jun 23
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Ya Shen, Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
Filed: 24 Mar 20
Utility
RF Acoustic Wave Resonators Integrated with High Electron Mobility Transistors Including a Shared Piezoelectric/buffer Layer
25 May 23
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device.
Jeffrey B. Shealy, Mary Winters, Craig Moe
Filed: 23 Jan 23
Utility
Bulk Acoustic Wave Resonator Filters Including Rejection-band Resonators
18 May 23
A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder.
YA SHEN, MICHAEL D. HODGE
Filed: 20 Jan 23
Utility
High power bulk acoustic wave resonator filter devices
16 May 23
An acoustic resonator device and method thereof.
Jeffrey B. Shealy, Shawn R. Gibb, Rohan W. Houlden, Joel M. Morgan
Filed: 27 Aug 19
Utility
Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
9 May 23
A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer.
Dae Ho Kim, Mary Winters, Ramakrishna Vetury, Jeffrey B. Shealy
Filed: 14 Jul 22
Utility
Acoustic wave resonator, RF filter circuit device and system
9 May 23
An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz.
Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
Filed: 17 Aug 22
Utility
Acoustic wave resonator RF filter circuit and system
9 May 23
An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz.
Jeffrey B. Shealy, Michael Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
Filed: 11 Aug 22
Utility
Acoustic wave resonator, RF filter circuit device and system
9 May 23
An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz.
Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
Filed: 15 Aug 22
Utility
Acoustic wave resonator RF filter circuit and system
25 Apr 23
An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz.
Jeffrey B. Shealy, Michael Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
Filed: 11 Aug 22
Utility
Method and Structure of Single Crystal Electronic Devices with Enhanced Strain Interface Regions by Impurity Introduction
20 Apr 23
A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region.
Shawn R. GIBB, Steven DENBAARS, Jeffrey B. SHEALY
Filed: 14 Dec 22
Utility
Wireless Communication Infrastructure System Configured with a Single Crystal Piezo Resonator and Filter Structure Using Thin Film Transfer Process
13 Apr 23
A system for a wireless communication infrastructure using single crystal devices.
Ramakrishna VETURY, Jeffrey B. Shealy
Filed: 7 Dec 22
Utility
Resonator Shapes for Bulk Acoustic Wave (Baw) Devices
13 Apr 23
A resonator circuit device.
Zhiqiang BI, Dae Ho Kim, Pinal Patel, Kathy W. Davis, Rohan W. Houlden
Filed: 12 Dec 22
Utility
Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
4 Apr 23
An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber.
Craig Moe, Jeffrey M. Leathersich
Filed: 7 Feb 20
Utility
5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit
4 Apr 23
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Ya Shen, Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
Filed: 8 Jul 22
Utility
RF filter circuit including BAW resonators
28 Mar 23
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Dae Ho Kim, Mary Winters, Ramakrishna Vetury, Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
Filed: 6 Jul 22
Utility
Front end module for 6.1 GHz wi-fi acoustic wave resonator RF filter circuit
21 Mar 23
A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
Filed: 15 Jun 22
Utility
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
14 Feb 23
A method of manufacture and structure for a monolithic single chip single crystal device.
Shawn R. Gibb, David Aichele, Ramakrishna Vetury, Mark D. Boomgarden, Jeffrey B. Shealy
Filed: 19 Feb 21
Utility
Bulk acoustic wave resonator filters including rejection-band resonators
14 Feb 23
A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder.
Ya Shen, Michael D. Hodge
Filed: 29 Apr 22
Utility
RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same
14 Feb 23
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device.
Jeffrey B. Shealy, Mary Winters, Craig Moe
Filed: 11 Aug 20