157 patents
Page 4 of 8
Utility
Methods of Forming Group III Piezoelectric Thin Films Via Sputtering
27 Oct 22
A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Craig Moe, Jeffrey B. Shealy, Mary Winters
Filed: 7 Jul 22
Utility
5.5 GHz Wi-Fi 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
27 Oct 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Ya SHEN, Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY
Filed: 8 Jul 22
Utility
5G n41 2.6 GHz BAND ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
27 Oct 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY
Filed: 6 Jul 22
Utility
5.5 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
18 Oct 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. Houlden, Ya Shen, David M. Aichele, Jeffrey B. Shealy
Filed: 14 Aug 19
Utility
FRONT END MODULE FOR 6.1 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
29 Sep 22
A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. SHEALY, Rohan W. HOULDEN, David M. AICHELE
Filed: 15 Jun 22
Utility
Acoustic wave resonator RF filter circuit device
27 Sep 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Mary Winters, Ramakrishna Vetury, Ya Shen, David M. Aichele
Filed: 21 Dec 21
Utility
Acoustic wave resonator RF filter circuit device
27 Sep 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Mary Winters, Ramakrishna Vetury, Ya Shen, David M. Aichele
Filed: 8 Feb 22
Utility
5G n79 Wi-Fi acoustic triplexer circuit
20 Sep 22
An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
Filed: 22 Apr 19
Utility
Wafer Scale Packaging
15 Sep 22
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor.
Jeffrey B. SHEALY
Filed: 27 May 22
Utility
Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
23 Aug 22
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho Kim, Mary Winters, Kenneth Fallon, Jeffrey B. Shealy
Filed: 15 Jun 20
Utility
Piezoelectric Acoustic Resonator with Improved TCF Manufactured with Piezoelectric Thin Film Transfer Process
18 Aug 22
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho KIM, Frank BI, Mary WINTERS, Ramakrishna VETURY, Abhay KOCHHAR
Filed: 4 May 22
Utility
5G n41 2.6 GHz band acoustic wave resonator RF filter circuit
16 Aug 22
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. Houlden, David M. Aichele, Jeffrey B. Shealy
Filed: 17 Jul 19
Utility
Methods of forming group III piezoelectric thin films via sputtering
9 Aug 22
A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Craig Moe, Jeffrey B. Shealy, Mary Winters
Filed: 16 Jul 19
Utility
Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
9 Aug 22
A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
Craig Moe, Jeffrey B. Shealy, Mary Winters, Dae Ho Kim, Abhay Saranswarup Kochhar
Filed: 14 Jan 20
Utility
Wafer scale packaging
26 Jul 22
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor.
Jeffrey B. Shealy
Filed: 21 Aug 19
Utility
5 & 6 GHz Wi-Fi COEXISTENCE ACOUSTIC WAVE RESONATOR RF DIPLEXER CIRCUIT
21 Jul 22
An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies.
Guillermo Moreno GRANADO, Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY
Filed: 18 Jan 21
Utility
5.1-7.1GHz Wi-Fi6E COEXISTENCE ACOUSTIC WAVE RESONATOR RF DIPLEXER CIRCUIT
21 Jul 22
An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies.
Saurabh GUPTA, Guillermo Moreno GRANADO, Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY, Bradford R. BERSIN
Filed: 30 Dec 21
Utility
Front end module for 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit
19 Jul 22
A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. Shealy, Rohan W. Houlden, David M. Aichele
Filed: 11 Mar 21
Utility
Method and Structure for High Performance Resonance Circuit with Single Crystal Piezoelectric Capacitor Dielectric Material
30 Jun 22
A method and structure for single crystal acoustic electronic device.
Jeffrey B. SHEALY
Filed: 14 Mar 22
Utility
Doped Crystalline Piezoelectric Resonator Films and Methods of Forming Doped Single Crystalline Piezoelectric Resonator Layers on Substrates Via Epitaxy
9 Jun 22
A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
Craig Moe, Jeffrey M. Leathersich, Dae Ho Kim, Zhiqiang Bi, Mary Winters
Filed: 29 Oct 21