157 patents
Page 6 of 8
Utility
Piezoelectric Acoustic Resonator with Dielectric Protective Layer Manufactured with Piezoelectric Thin Film Transfer Process
29 Jul 21
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho KIM, Frank Zhiquang BI, Mary WINTERS, Abhay Saranswarup KOCHHAR, Emad MEHDIZADEH, Rohan W. HOULDEN, Jeffrey B. SHEALY
Filed: 14 Apr 21
Utility
Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
20 Jul 21
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho Kim, Mary Winters, Ramakrishna Vetury, Jeffrey B. Shealy
Filed: 6 Jun 19
Utility
Method of manufacture for single crystal acoustic resonator devices using micro-vias
13 Jul 21
A method of manufacture for an acoustic resonator device.
Alexander Y. Feldman, Mark D. Boomgarden, Michael P. Lewis, Jeffrey B. Shealy, Ramakrishna Vetury
Filed: 10 Jan 19
Utility
Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit
13 Jul 21
A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. Shealy, Rohan W. Houlden, Shawn R. Gibb, David M. Aichele
Filed: 19 Sep 18
Utility
Monolithic Single Chip Integrated Radio Frequency Front End Module Configured with Single Crystal Acoustic Filter Devices
1 Jul 21
A method of manufacture and structure for a monolithic single chip single crystal device.
Shawn R. GIBB, David AICHELE, Ramakrishna VETURY, Mark D. BOOMGARDEN, Jeffrey B. SHEALY
Filed: 19 Feb 21
Utility
FRONT END MODULE FOR 6.1 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
1 Jul 21
A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. SHEALY, Rohan W. HOULDEN, David M. AICHELE
Filed: 11 Mar 21
Utility
Structure and Method of Manufacture for Acoustic Resonator or Filter Devices Using Improved Fabrication Conditions and Perimeter Structure Modifications
17 Jun 21
A method of manufacture for an acoustic resonator or filter device.
Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
Filed: 9 Feb 21
Utility
Piezoelectric Acoustic Resonator Manufactured with Piezoelectric Thin Film Transfer Process
17 Jun 21
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho KIM, Mary WINTERS, Ramakrishna VETURY, Jeffrey B. SHEALY
Filed: 1 Mar 21
Utility
Front end module for 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
8 Jun 21
A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. Shealy, Rohan W. Houlden, Shawn R. Gibb, David M. Aichele
Filed: 13 May 20
Utility
Bulk Acoustic Wave Resonator Filters Including Rejection-band Resonators
3 Jun 21
A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder.
Ya Shen, Michael D. Hodge
Filed: 11 Dec 20
Utility
Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications
27 Apr 21
A method of manufacture for an acoustic resonator or filter device.
Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
Filed: 19 Sep 18
Utility
5G band n79 acoustic wave resonator RF filter circuit
13 Apr 21
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. Houlden, Jeffrey B. Shealy, Shawn R. Gibb, David Aichele
Filed: 30 Oct 18
Utility
5.9 GHz c-V2X and DSRC acoustic wave resonator RF filter circuit
13 Apr 21
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. Shealy, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury
Filed: 23 Aug 18
Utility
5.5 GHz Wi-fi 5G coexistence acoustic wave resonator RF filter circuit
13 Apr 21
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. Houlden, Jeffrey B. Shealy, David M. Aichele
Filed: 1 Mar 19
Utility
Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications
13 Apr 21
A method of manufacture for an acoustic resonator or filter device.
Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
Filed: 18 Sep 18
Utility
5.2 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
13 Apr 21
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. Shealy, Rohan W. Houlden, Shawn R. Gibb, David M. Aichele
Filed: 19 Sep 18
Utility
5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
13 Apr 21
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. Shealy, Michael Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David Aichele
Filed: 26 Jun 18
Utility
Structure and Method of Manufacture for Acoustic Resonator Using Improved Fabrication Conditions, Perimeter Structure Modifications, and Thin Film Transfer Process
8 Apr 21
A method of manufacture for an acoustic resonator or filter device.
Ramakrishna VETURY, Alexander Y. FELDMAN, Michael D. HODGE, Art GEISS, Mark D. BOOMGARDEN, Michael P. LEWIS, Pinal PATEL, Dae Ho KIM, Mary WINTERS, Jeffrey B. SHEALY
Filed: 23 Nov 20
Utility
Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
23 Mar 21
A method of manufacture and structure for a monolithic single chip single crystal device.
Shawn R. Gibb, David M. Aichele, Ramakrishna Vetury, Mark D. Boomgarden, Jeffrey B. Shealy
Filed: 5 Aug 19
Utility
RF Acoustic Wave Resonators Integrated with High Electron Mobility Transistors Including a Shared Piezoelectric/buffer Layer and Methods of Forming the Same
4 Mar 21
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device.
Jeffrey B. Shealy, Mary Winters, Craig Moe
Filed: 11 Aug 20