157 patents
Page 8 of 8
Utility
Method of Manufacture for Single Crystal Acoustic Resonator Devices Using Micro-vias
27 May 20
A method of manufacture for an acoustic resonator device.
Shawn R. GIBB, Alexander Y. FELDMAN, Mark D. BOOMGARDEN, Michael P. LEWIS, Ramakrishna VETURY, Jeffrey B. SHEALY
Filed: 28 Jan 20
Utility
Methods of Forming Group III Piezoelectric Thin Films Via Removal of Portions of First Sputtered Material
13 May 20
A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
Craig Moe, Jeffrey B. Shealy, Mary Winters, Dae Ho Kim, Abhay Saranswarup Kochhar
Filed: 13 Jan 20
Utility
Method and Structure for Single Crystal Acoustic Resonator Devices Using Thermal Recrystallization
15 Apr 20
A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer.
Shawn R. GIBB, Craig MOE, Jeff LEATHERSICH, Steven DENBAARS, Jeffrey B. SHEALY
Filed: 9 Dec 19
Utility
Methods of Forming Doped Crystalline Piezoelectric Thin Films Via Mocvd and Related Doped Crystalline Piezoelectric Thin Films
8 Apr 20
A method of forming a piezoelectric film can include providing a wafer in a CVD reaction chamber and forming an aluminum nitride material on the wafer, the aluminum nitride material doped with a first element E1 selected from group IIA or from group IIB and doped with a second element E2 selected from group IVB to provide the aluminum nitride material comprising a crystallinity of less than about 1.5 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Craig Moe, Jeffrey M. Leathersich, Arthur E. Geiss
Filed: 1 Aug 19
Utility
4.5G 3.55-3.7 GHz BAND BULK ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
8 Apr 20
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Jeffrey B. SHEALY, Rohan W. HOULDEN, David M. AICHELE
Filed: 8 Dec 19
Utility
Wireless communication infrastructure system configured with a single crystal piezo resonator and filter structure
6 Apr 20
A system for a wireless communication infrastructure using single crystal devices.
Ramakrishna Vetury, Shawn R. Gibb, Mark D. Boomgarden, Jeffrey B. Shealy
Filed: 10 Sep 17
Utility
Method of Manufacture for Single Crystal Capacitor Dielectric for a Resonance Circuit
18 Mar 20
A method of manufacturing an integrated circuit.
Jeffrey B. SHEALY
Filed: 21 Nov 19
Utility
Method of manufacture for single crystal acoustic resonator devices using micro-vias
2 Mar 20
A method of manufacture for an acoustic resonator device.
Shawn R. Gibb, Alexander Y. Feldman, Mark D. Boomgarden, Michael P. Lewis, Ramakrishna Vetury, Jeffrey B. Shealy
Filed: 26 Jul 16
Utility
High Power Bulk Acoustic Wave Resonator Filter Devices
26 Feb 20
An acoustic resonator device and method thereof.
Jeffrey B. SHEALY, Shawn R. GIBB, Rohan W. HOULDEN, Joel M. MORGAN
Filed: 26 Aug 19
Utility
Bulk Acoustic Wave Resonator Filters Including Rejection-band Resonators
26 Feb 20
A Bulk Acoustic Wave (BAW) resonator filter can include a BAW resonator pass-band filter ladder, where the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder.
Ya Shen, Michael D. Hodge
Filed: 21 Oct 19
Utility
Methods of forming group III piezoelectric thin films via sputtering
8 Jan 20
A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
Craig Moe, Jeffrey B. Shealy, Mary Winters
Filed: 15 Jul 19
Utility
Method and structure for single crystal acoustic resonator devices using thermal recrystallization
30 Dec 19
A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer.
Shawn R. Gibb, Craig Moe, Jeff Leathersich, Steven Denbaars, Jeffrey B. Shealy
Filed: 12 Jul 18
Utility
Method of manufacture for single crystal capacitor dielectric for a resonance circuit
23 Dec 19
A method of manufacturing an integrated circuit.
Jeffrey B. Shealy
Filed: 27 Nov 16
Utility
Wafer Scale Packaging
18 Dec 19
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor.
Jeffrey B. SHEALY
Filed: 20 Aug 19
Utility
Monolithic Single Chip Integrated Radio Frequency Front End Module Configured with Single Crystal Acoustic Filter Devices
4 Dec 19
A method of manufacture and structure for a monolithic single chip single crystal device.
Shawn R. GIBB, David M. AICHELE, Ramakrishna VETURY, Mark D. BOOMGARDEN, Jeffrey B. SHEALY
Filed: 4 Aug 19
Utility
5.5 GHz WI-FI COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
4 Dec 19
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Rohan W. HOULDEN, Ya SHEN, David M. AICHELE, Jeffrey B. SHEALY
Filed: 13 Aug 19
Utility
Effective Coupling Coefficients for Strained Single Crystal Epitaxial Film Bulk Acoustic Resonators
4 Dec 19
In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses.
Jeffrey B. SHEALY, Shawn R. GIBB
Filed: 31 May 18