84 patents
Utility
Method and Structure for High Performance Resonance Circuit with Single Crystal Piezoelectric Capacitor Dielectric Material
21 Dec 23
A method and structure for single crystal acoustic electronic device.
Jeffrey B. SHEALY
Filed: 24 Aug 23
Utility
Method for Fabricating an Acoustic Resonator Device with Perimeter Structures
26 Oct 23
A method of manufacture for an acoustic resonator or filter device.
Ramakrishna VETURY, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
Filed: 27 Jun 23
Utility
Acoustic Wave Resonator, RF Filter Circuit and System
19 Oct 23
An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators.
Dae Ho KIM, Mary WINTERS, Ramakrishna VETURY, Jeffrey B. SHEALY
Filed: 23 Jun 23
Utility
Baw Resonators with Antisymmetric Thick Electrodes
19 Oct 23
A resonator circuit device.
Dae Ho Kim, Mary Winters, Zhiqiang Bi
Filed: 22 Jun 23
Utility
FRONT END MODULES FOR 5.6 GHz & 6.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUITS
19 Oct 23
A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit.
Jeffrey B. SHEALY, Rohan W. HOULDEN, David M. ALCHELE
Filed: 22 Jun 23
Utility
Piezoelectric Acoustic Resonator with Dielectric Protective Layer Manufactured with Piezoelectric Thin Film Transfer Process
12 Oct 23
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho KIM, Frank Zhiquang Bi, Mary Winters, Abhay Kochhar, Emad Mehdizadeh, Rohan W. Houlden, Jeffrey B. Shealy
Filed: 8 Jun 23
Utility
5.5 GHz Wi-Fi 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
12 Oct 23
An RF circuit device using modified lattice, lattice, and ladder circuit topologies.
Ya SHEN, Rohan W. HOULDEN, David M. AICHELE, Jeffrey B. SHEALY
Filed: 13 Jun 23
Utility
Methods of Forming Piezoelectric Resonator Devices Including Embedded Energy Confinement Frames
21 Sep 23
A piezoelectric resonator device can be formed to include a piezoelectric film including an active area configured to provide a thickness excited mode of vibration, a first electrode on a first surface of the piezoelectric film positioned to electromechanically couple to the active area, a second electrode on a second surface of the piezoelectric film, opposite the first surface, the second electrode positioned to electromechanically couple to the active area, an energy confinement frame extending on the piezoelectric film embedded in the first or second electrode, an inner side wall of the energy confinement frame facing toward the active area and extending around the active area to define a perimeter that separates the active area located inside the perimeter from an outer area located outside the perimeter adjacent to the active area, an outer side wall of the energy confinement frame facing toward the outer area and aligned to an outer side wall of the first or second electrode and a conformal low-impedance acoustic layer extending on the active area over the energy confinement frame to cover the outer side wall of the energy confinement frame, and onto the piezoelectric film in the outer area.
Abhay Saranswarup Kochhar, Dae Ho Kim, Zhiqiang Bi, Emad Mehdizadeh, Mojtaba Hodjat-Shamami, Mary Winters, Rohan Houlden, Jeffrey B. Shealy
Filed: 17 Mar 23
Utility
Piezoelectric Acoustic Resonator Manufactured with Piezoelectric Thin Film Transfer Process
14 Sep 23
A method and structure for a transfer process for an acoustic resonator device.
Dae Ho KIM, Mary WINTERS, Ramakrishna VETURY, Jeffrey B. SHEALY
Filed: 22 May 23
Utility
Piezoelectric Acoustic Resonator Manufactured with Piezoelectric Thin Film Transfer Process
10 Aug 23
A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer.
Dae Ho KIM, Mary Winters, Ramakrishna Vetury, Jeffrey B. Shealy
Filed: 19 Apr 23
Utility
Methods of Forming Single Crystal Piezoelectric Layers Using Low Temperature Epitaxy and Related Single Crystalline Piezoelectric Resonator Films
3 Aug 23
MOCVD systems can be used to form single crystal piezoelectric ScxAl1−xN layers having a concentration of Sc in a range between about 4% and about 18% at temperatures in a range, for example, between about 800 degrees Centigrade and about 950 degrees Centigrade.
Craig Moe, Jeffrey M. Leathersich
Filed: 2 Aug 21
Utility
Apparatus for Forming Single Crystal Piezoelectric Layers Using Low-vapor Pressure Metalorganic Precursors In CVD Reactors with Temperature-controlled Injector Columns and Methods of Forming Single Crystal Piezoelectric Layers Using the Same
27 Jul 23
An apparatus includes a chemical vapor deposition (CVD) reactor, an injector column that provides a metal organic precursor vapor into the CVD reactor, a heater in thermal communication with the injector column, and a control circuit configured to control the heater and thereby maintain the metal organic precursor vapor in the injector column above a saturation temperature.
Craig Moe, Jeffrey M. Leathersich
Filed: 24 Jan 22
Utility
Apparatus for Forming Single Crystal Piezoelectric Layers Using Low-vapor Pressure Metalorganic Precursors In CVD Systems and Methods of Forming Single Crystal Piezoelectric Layers Using the Same
6 Jul 23
An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber.
Craig Moe, Jeffrey M. Leathersich
Filed: 9 Mar 23
Utility
RF Acoustic Wave Resonators Integrated with High Electron Mobility Transistors Including a Shared Piezoelectric/buffer Layer
25 May 23
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device.
Jeffrey B. Shealy, Mary Winters, Craig Moe
Filed: 23 Jan 23
Utility
Bulk Acoustic Wave Resonator Filters Including Rejection-band Resonators
18 May 23
A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder.
YA SHEN, MICHAEL D. HODGE
Filed: 20 Jan 23
Utility
Method and Structure of Single Crystal Electronic Devices with Enhanced Strain Interface Regions by Impurity Introduction
20 Apr 23
A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region.
Shawn R. GIBB, Steven DENBAARS, Jeffrey B. SHEALY
Filed: 14 Dec 22
Utility
Wireless Communication Infrastructure System Configured with a Single Crystal Piezo Resonator and Filter Structure Using Thin Film Transfer Process
13 Apr 23
A system for a wireless communication infrastructure using single crystal devices.
Ramakrishna VETURY, Jeffrey B. Shealy
Filed: 7 Dec 22
Utility
Resonator Shapes for Bulk Acoustic Wave (Baw) Devices
13 Apr 23
A resonator circuit device.
Zhiqiang BI, Dae Ho Kim, Pinal Patel, Kathy W. Davis, Rohan W. Houlden
Filed: 12 Dec 22
Utility
RF Baw Resonator Filter Architecture for 6.5GHZ Wi-fi 6E Coexistence and Other Ultra-wideband Applications
2 Feb 23
A multi-stage matching network filter circuit device.
Guillermo Moreno GRANADO, Rohan W. HOULDEN, David M. Aichele, Jeffrey B. SHEALY
Filed: 6 Oct 22
Utility
Method of Manufacture for Single Crystal Capacitor Dielectric for a Resonance Circuit
26 Jan 23
A method of manufacturing an integrated circuit.
Jeffrey B. SHEALY
Filed: 5 Oct 22