25 patents
Utility
Methods for Thermal Treatment of Substrates
30 Nov 23
In the thermal treatment of substrates, a susceptor is used to hold at least one substrate.
Peter Sebald LAUFFER
Filed: 10 Aug 23
Utility
Method for Emissivity-corrected Pyrometry
23 Nov 23
A substrate is coated with a multilayer structure which has layers of a first portion and layers of a second portion that are deposited on the layers of the first portion.
Karsten ROJEK, Dirk HEYDHAUSEN
Filed: 5 Oct 21
Utility
Method for Using Shield Plate In a CVD Reactor
9 Nov 23
A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device.
Adam BOYD, Wilhelm Josef Thomas KRÜCKEN, Honggen JIANG, Fred Michael Andrew CRAWLEY
Filed: 19 Jul 23
Utility
CVD Reactor with Temperature-controllable Gas Inlet Region
19 Oct 23
A CVD reactor includes a reactor housing, a susceptor that forms a floor of a process chamber, a gas inlet member with at least one gas inlet region, a heating device arranged under the susceptor for producing a difference in temperature between the main body of the susceptor and a ceiling of the process chamber, substrate carriers located at a distance from the gas inlet member in a direction of flow, and flow zone plates arranged between the gas inlet member and each of the substrate carriers.
Philip HENS
Filed: 31 Aug 21
Utility
Gas Inlet Element of a CVD Reactor with Two Infeed Points
12 Oct 23
In a device and a method for depositing at least one layer on at least one substrate, a first gas flow comprising a reactive gas is fed through a first gas inlet opening, and a second gas flow is fed through a second gas inlet opening, into at least one gas distribution volume of a gas inlet element.
Adam BOYD
Filed: 2 Sep 21
Utility
Method for Identifying Substrates Which Are Faulty or Have Been Incorrectly Inserted into a CVD Reactor
21 Sep 23
With the aid of one or more optical sensors, substrates which are faulty or have been incorrectly inserted in a CVD reactor are identified.
Utz Herwig HAHN, Martin DAUELSBERG, Thomas SCHMITT
Filed: 20 Jul 21
Utility
Device and Method for Evaporating an Organic Powder
13 Jul 23
In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value.
Markus JAKOB, Andy EICHLER
Filed: 16 Jun 21
Utility
Method for Ascertaining the End of a Cleaning Process for a Process Chamber of a Mocvd Reactor
25 May 23
In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output.
Utz Herwig HAHN, Martin EICKELKAMP, Dirk FAHLE
Filed: 17 Mar 21
Utility
CVD Reactor and Method for Controlling the Surface Temperature of the Substrates
9 Feb 23
In a CVD reactor and a method for the open-loop/closed-loop control of the surface temperature of substrates arranged therein, the substrates lie on substrate-retaining elements, which are each supported by a gas cushion.
Ralf LEIERS
Filed: 5 Jan 21
Utility
Gas Inlet Device for a CVD Reactor
5 Jan 23
A gas distribution device has a plurality of gas inlet regions that are arranged above each other and can be adjusted by switching on or off respective valves.
Martin EICKELKAMP
Filed: 1 Dec 20
Utility
Use of a CVD Reactor for Depositing Two-dimensional Layers
5 Jan 23
A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber.
Kenneth B. K. TEO, Clifford MCALEESE, Ben Richard CONRAN
Filed: 30 Oct 20
Utility
Method for Depositing a Two-dimensional Coating and CVD Reactor
22 Dec 22
A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber.
Kenneth B. K. TEO, Clifford MCALEESE, Ben Richard CONRAN
Filed: 30 Oct 20
Utility
Wall-cooled Gas-inlet Element for a CVD Reactor
15 Dec 22
A gas inlet element for a CVD reactor includes a cylindrical main body, which together with an outer wall, forms a gas outlet face.
Marcel KOLLBERG, Benjamin David WRIGHT, Merim MUKINOVIC, Barry O'NEIL, Marc PLUMMER
Filed: 17 Nov 20
Utility
Method and Apparatus for Depositing Organic Layers
1 Dec 22
An apparatus for depositing organic layers on a substrate includes a gas-mixing device with one or more inlets, each for supplying a gas flow consisting of previously vaporized organic molecules that are conveyed by a carrier gas and have a molar mass greater than 300 g/mol or 400 g/mol, gas diversion elements which homogeneously mix the organic molecules in the carrier gas, and an outlet from which a homogeneous gas mixture discharges.
Hermann Albert GIESE, Alexander GEORGI, Jan Raphael BINDEL, Dinesh Kanna SUBRAMANIAM, Tobias SCHÄFER, Dietmar KEIPER, Olaf Martin WURZINGER
Filed: 28 Oct 20
Utility
Method and Device for Forming Bundles of Nanofilaments
29 Sep 22
A device can be used as an electrode for a lithium-ion battery.
Bernd SCHINELLER, Kenneth B. K. TEO, Nalin Lalith RUPESINGHE
Filed: 3 Jun 22
Utility
Gas-inlet Element for a CVD Reactor
18 Aug 22
A gas outlet surface of a gas inlet element for a CVD reactor or a gas outlet surface of a shielding plate for a gas inlet element has a multiplicity of gas outlet openings arranged around a center of the gas outlet surface.
Oliver SCHÖN
Filed: 10 Jul 20
Utility
Method for Depositing a Semiconductor Layer System, Which Contains Gallium and Indium
30 Jun 22
In a method for depositing semiconductor layers, a first process step is performed to deposit a layer containing gallium and a second process step is performed to deposit a layer containing indium.
Adam BOYD
Filed: 5 May 20
Utility
Susceptor Arrangement of a CVD Reactor
16 Jun 22
A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one coveting element are arranged.
Francisco RUDA Y WITT, Marcel KOLLBERG, Hendrik RAUF
Filed: 28 Feb 20
Utility
Method for Recording a State of a CVD Reactor Under Production Conditions
16 Jun 22
During a process involving one or more process steps of a process phase, in which a substrate is located in the process chamber of a CVD reactor, a process temperature and a pressure are each set and a process gas flow is fed into the process chamber by way of control data delivered by a controller in accordance with a formula stored in the controller.
Pascal TILLMANNS, Oliver SCHÖN, Thomas SCHMITT, Peter Sebald LAUFFER
Filed: 20 Mar 20
Utility
Susceptor of a CVD Reactor
10 Mar 22
A susceptor for a CVD reactor includes a bearing surface for supporting a substrate holder.
Wilhelm Josef Thomas KRÜCKEN, Peter Sebald LAUFFER
Filed: 6 Dec 19