10 patents
Utility
Vertical Field Effect Transistor Device and Method of Fabrication
30 Nov 23
A method and vertical FET device fabricated in GaN or other suitable material.
James R. SHEALY, Richard J. Brown
Filed: 20 Apr 23
Utility
Streamlined GaN-based fabrication of light emitting diode structures
31 Oct 23
Light Emitting Diodes (LEDs) made with GaN and related materials are used to realize high efficiency devices which emit visible radiation.
Richard J. Brown, Christopher M. Martin, Shikhar Bajracharya
Filed: 4 Aug 21
Utility
Vertical field effect transistor device and method of fabrication
16 May 23
A method and vertical FET device fabricated in GaN or other suitable material.
James R. Shealy, Richard J. Brown
Filed: 14 Jan 22
Utility
BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD
12 Jan 23
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium.
James R. SHEALY
Filed: 14 Sep 22
Utility
BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD
12 Jan 23
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium.
James R. SHEALY, Richard J. Brown
Filed: 14 Sep 22
Utility
Beryllium doped GaN-based light emitting diode and method
11 Oct 22
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium.
James R. Shealy, Richard J. Brown
Filed: 9 Mar 20
Utility
Vertical Field Effect Transistor Device and Method of Fabrication
5 May 22
A method and vertical FET device fabricated in GaN or other suitable material.
James R. SHEALY, Richard J. BROWN
Filed: 14 Jan 22
Utility
Vertical field effect transistor device and method of fabrication
15 Feb 22
A method and vertical FET device fabricated in GaN or other suitable material.
James R. Shealy, Richard J. Brown
Filed: 10 Mar 20
Utility
STREAMLINED GaN-BASED FABRICATION OF LIGHT EMITTING DIODE STRUCTURES
25 Nov 21
Light Emitting Diodes (LEDs) made with GaN and related materials are used to realize high efficiency devices which emit visible radiation.
Richard J. BROWN, Christopher M. MARTIN, Shikhar BAJRACHARYA
Filed: 4 Aug 21
Utility
Streamlined GaN-based fabrication of light emitting diode structures
7 Sep 21
Light Emitting Diodes (LEDs) made with GaN and related materials are used to realize high efficiency devices which emit visible radiation.
Richard J. Brown, Christopher M. Martin, Shikhar Bajracharya
Filed: 9 Mar 20
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