360 patents
Page 2 of 18
Utility
Method of Operating a PVD Apparatus
6 Jul 23
A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate.
Scott HAYMORE, Tony WILBY, Stephen BURGESS
Filed: 1 Oct 22
Utility
Pattern centric process control
4 Jul 23
Pattern centric process control is disclosed.
Chenmin Hu, Khurram Zafar, Ye Chen, Yue Ma, Rong Lv, Justin Chen, Abhishek Vikram, Yuan Xu, Ping Zhang
Filed: 5 Apr 21
Utility
Cross layer common-unique analysis for nuisance filtering
4 Jul 23
Common events between layers on a semiconductor wafer are filtered.
Bjorn Brauer
Filed: 27 Sep 21
Utility
Method and apparatus for plasma etching
30 May 23
A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched.
Huma Ashraf, Kevin Riddell, Codrin Prahoveanu
Filed: 15 Nov 20
Utility
Inspection and metrology using broadband infrared radiation
30 May 23
Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed.
Yung-Ho Alex Chuang, Vahid Esfandyarpour, John Fielden, Baigang Zhang, Yinying Xiao Li
Filed: 26 Oct 17
Utility
Apparatus for the exposure of plate-shaped workpieces with high throughput
23 May 23
A movable table system comprising two identical tables on a common rail arrangement having a linear rail region underneath a detection unit and a processing unit, and therefore the tables can be alternatingly moved in a straight line along the common rail arrangement, in the same table-movement direction, fully underneath the detection unit and processing unit, and can be independently controlled by a computer unit.
Steffen Ruecker, Uwe Klowsky
Filed: 11 Dec 19
Utility
Apparatus for electrochemically processing semiconductor substrates
9 May 23
A method of processing a semiconductor wafer is provided.
John MacNeil, Martin Ayres, Trevor Thomas
Filed: 24 Jun 21
Utility
Device for Introducing a Pattern by Radiation on a Wound Endless Structure
4 May 23
A device for introducing patterns by radiating a wound continuous substrate.
Peter VOGT, Toni STROBEL, René PAGEL, Uwe KLOWSKY, Steffen RUECKER, Christian KOENIG, Marcus WITTER
Filed: 19 Apr 20
Utility
PVD Method and Apparatus
4 May 23
A substrate is positioned on a substrate supporting upper surface of a substrate support.
Scott Haymore, Adrian Thomas, Tony Wilby, Stephen Burgess
Filed: 29 Oct 22
Utility
Method and Apparatus for Controlling Stress Variation in a Material Layer Formed Via Pulsed DC Physical Vapor Deposition
30 Mar 23
A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition.
Anthony WILBY, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
Filed: 4 Dec 22
Utility
Reduction or Elimination of Pattern Placement Error In Metrology Measurements
30 Mar 23
Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology.
Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
Filed: 6 Dec 22
Utility
3D Microscope Including Insertable Components To Provide Multiple Imaging And Measurement Capabilities
23 Mar 23
A three-dimensional (3D) microscope includes various insertable components that facilitate multiple imaging and measurement capabilities.
James Jianguo Xu, Ken Kinsun Lee, Rusmin Kudinar, Ronny Soetarman, Hung Phi Nguyen, Zhen Hou
Filed: 28 Nov 22
Utility
Method of Deposition
16 Mar 23
According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH4), a hydrocarbon gas or vapour, nitrogen gas (N2), and hydrogen gas (H2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.
Tristan Harper, Kathrine Crook
Filed: 18 Aug 22
Utility
Accelerated training of a machine learning based model for semiconductor applications
14 Feb 23
Methods and systems for accelerated training of a machine learning based model for semiconductor applications are provided.
Kris Bhaskar, Laurent Karsenti, Scott Young, Mohan Mahadevan, Jing Zhang, Brian Duffy, Li He, Huajun Ying, Hung Nien, Sankar Venkataraman
Filed: 29 Dec 16
Utility
Diagnostic systems and methods for deep learning models configured for semiconductor applications
14 Feb 23
Methods and systems for performing diagnostic functions for a deep learning model are provided.
Jing Zhang, Ravi Chandra Donapati, Mark Roulo, Kris Bhaskar
Filed: 1 Sep 17
Utility
Methods of Boric Acid Analysis and Process Control of Metallization Solutions
9 Feb 23
Techniques for selective measurement and monitoring of boric acid concentrations in processing solutions are provided.
Jingjing Wang, Jong Woung Kim, Patrick Saitta, Eugene Shalyt
Filed: 5 Jul 22
Utility
System and method for monitoring parameters of a semiconductor factory automation system
31 Jan 23
A system for monitoring one or more conditions of an automation system of a semiconductor factory includes one or more instrumented substrates, one or more sealable containers and one or more system servers.
Mor Azarya, Michael D. Brain, Ami Appelbaum, Shai Mark, Arie Hoffman
Filed: 19 Feb 16
Utility
Loosely-coupled inspection and metrology system for high-volume production process monitoring
24 Jan 23
A metrology system is disclosed.
Song Wu, Yin Xu, Andrei V. Shchegrov, Lie-Quan Lee, Pablo Rovira, Jonathan Madsen
Filed: 27 Feb 19
Utility
Measuring thin films on grating and bandgap on grating
17 Jan 23
Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors.
Houssam Chouaib, Zhengquan Tan
Filed: 15 Apr 20
Utility
Selective monitoring of multiple silicon compounds
17 Jan 23
Methods and apparatuses for selective monitoring of multiple silicon compounds in etchant solutions are provided.
Eugene Shalyt, Guang Liang
Filed: 27 Sep 19