7578 patents
Page 2 of 379
Utility
Oxidation Barriers with CVD Soak Processes
18 Jan 24
A method of forming an oxidation barrier layer in a semiconductor structure includes forming a contact layer on an exposed surface of a semiconductor region of a semiconductor structure in a first processing chamber, wherein the semiconductor region comprises silicon germanium doped with p-type dopants and the contact layer comprises silicon germanium (SiGe) with a ratio of germanium (Ge) ranging between 60% and 100%, and forming an oxidation barrier layer comprising gallium (Ga) on the contact layer, by applying gallium (Ga)-containing liquid precursor to a surface of the contact layer in the first processing chamber.
Nicolas Louis BREIL, Yi-Chiau HUANG, Jesus AVILA AVENDANO
Filed: 13 Jun 23
Utility
Concentration Sensor for Precursor Delivery System
18 Jan 24
First sensor data indicative of a first mass flow rate of a first gas flowing to a vaporization chamber is received.
Vivek B. Shah, Varoujan Chakarian, Upendra Ummethala
Filed: 27 Sep 23
Utility
Methods of Forming Cover Lens Structures for Display Devices, and Related Apparatus and Devices
18 Jan 24
Implementations of the present disclosure relate to methods, and related apparatus and devices, of forming flexible cover lens structures for flexible or foldable display devices.
Helinda NOMINANDA, Tae Kyung WON, Han NGUYEN, Seong Ho YOO, Soo Young CHOI
Filed: 13 Jul 22
Utility
MEMS resonator sensor substrate for plasma, temperature, stress, or deposition sensing
16 Jan 24
Embodiments disclosed herein include diagnostic substrates and methods of using the diagnostic substrates to extract plasma parameters.
Chuang-Chia Lin, David Peterson, Philip Allan Kraus, Amir Bayati
Filed: 2 Jul 21
Utility
Multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system
16 Jan 24
Methods and systems for RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided.
Dermot Cantwell, Quentin Ernie Walker, Serghei Malkov, Jatinder Kumar
Filed: 23 Jan 23
Utility
Ion implantation to modify glass locally for optical devices
16 Jan 24
Embodiments described herein provide for optical devices with methods of forming optical device substrates having at least one area of increased refractive index or scratch resistance.
Nai-Wen Pi, Jinxin Fu, Kang Luo, Ludovic Godet
Filed: 22 Mar 22
Utility
Methods and systems for cleaning process sequence management
16 Jan 24
Methods and systems for cleaning process sequence management are provided.
Chongyang C. Wang
Filed: 9 Nov 21
Utility
Methods for electrochemical deposition of isolated seed layer areas
16 Jan 24
A method of depositing a metal material on an isolated seed layer uses a barrier layer as a conductive path for plating.
Marvin Louis Bernt
Filed: 23 Sep 21
Utility
Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
16 Jan 24
A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface.
Scott Falk, Jun-Feng Lu, Qintao Zhang
Filed: 9 Nov 21
Utility
Diffusion barrier films enabling the stability of lithium
16 Jan 24
Lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same are provided.
Dmitri A. Brevnov
Filed: 18 Jun 19
Utility
System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
16 Jan 24
An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to a front side of the substrate, opposite the back side of the substrate.
Qin Chen, Julian G. Blake, Michael W. Osborne, Steven M. Anella, Jonathan D. Fischer
Filed: 21 May 20
Utility
Process chamber with reduced plasma arc
16 Jan 24
A processing system comprises a chamber body, a substrate support and a lid assembly.
Fei Wu, Abdul Aziz Khaja, Sungwon Ha, Vinay K. Prabhakar, Ganesh Balasubramanian
Filed: 23 Apr 20
Utility
Control of Processing Parameters During Substrate Polishing Using Constrained Cost Function
11 Jan 24
Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region.
Benjamin Cherian, Sivakumar Dhandapani
Filed: 20 Sep 23
Utility
Carbon Hardmask Opening Using Boron Nitride Mask
11 Jan 24
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber.
Jeong Hwan Kim, Yeonju Kwak, Qian Fu, Siyu Zhu, Chuanxi Yang, Hang Yu
Filed: 11 Jul 22
Utility
Sustainability Monitoring Platform with Sensor Support
11 Jan 24
In embodiments, a method includes receiving, by a processing device, first sensor data generated by a plurality of sensors of a process chamber of a manufacturing system during execution of a fabrication process.
Ala Moradian, Aleksey Yanovich, Orlando Trejo, Elizabeth Neville, Dinesh Saigal, Umesh Madhav Kelkar
Filed: 4 Nov 22
Utility
INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY
11 Jan 24
Horizontal gate-all-around devices and methods of manufacturing same are described.
Sai Hooi Yeong, Jody A. Fronheiser, Benjamin Colombeau, Balasubramanian Pranatharthiharan, El Mehdi Bazizi, Ashish Pal
Filed: 10 Jul 23
Utility
Continuous Liner for Use In a Processing Chamber
11 Jan 24
A processing chamber includes a chamber body defining an interior volume and including an access port.
James D. Carducci, Kenneth S. Collins, Kartik Ramaswamy
Filed: 20 Sep 23
Utility
Selective Capping of Contact Layer for Cmos Devices
11 Jan 24
A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a hard mask on a semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the hard mask covers an exposed surface of the first semiconductor region within the first opening, performing a first selective deposition process to form a contact layer on the exposed surface of the second semiconductor region within the second opening, and performing a second selective deposition process to form a cap layer on the contact layer.
Nicolas Louis BREIL, Avgerinos V. GELATOS, Balasubramanian PRANATHARTHIHARAN
Filed: 6 Jun 23
Utility
Use of Adaptive Replacement Maps In Digital Lithography for Local Cell Replacement
11 Jan 24
Embodiments described herein relate to a system, software, and a method of using the system to edit a design to be printed by a lithography system.
Aravind INUMPUDI, Thomas L. LAIDIG
Filed: 20 Sep 23
Utility
Method to Optimize Post Deposition Baking Condition of Photo Resistive Materials
11 Jan 24
Embodiments disclosed herein include a method of optimizing a post deposition bake of a photoresist layer.
LUISA BOZANO, PAOLA DE CECCO, BEKELE WORKU, LAKMAL CHARIDU KALUTARAGE, RUIYING HAO
Filed: 1 Jun 23