7578 patents
Page 9 of 379
Utility
Horizontal gate-all-around device nanowire air gap spacer formation
19 Dec 23
Embodiments provide methods for forming nanowire structures, such as, for example, horizontal gate-all-around (hGAA) structures.
Shiyu Sun, Nam Sung Kim, Bingxi Sun Wood, Naomi Yoshida, Sheng-Chin Kung, Miao Jin
Filed: 16 Feb 22
Utility
Memory Cell Selector for High-voltage Set and Reset Operations
14 Dec 23
A selector for a memory cell in a memory array may operate by opening different conductive paths to high and low voltages during set and reset operations.
Frank Tzen-Wen Guo
Filed: 13 Jun 22
Utility
Molten Liquid Transport for Tunable Vaporization In Ion Sources
14 Dec 23
An ion source with a crucible is disclosed.
Craig R. Chaney, Graham Wright
Filed: 8 Jun 22
Utility
Uniform In Situ Cleaning and Deposition
14 Dec 23
Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet.
Saket Rathi, Tuan A. Nguyen, Amit Bansal, Yuxing Zhang, Badri N. Ramamurthi, Nitin Pathak, Abdul Aziz Khaja, Sarah Michelle Bobek
Filed: 28 Aug 23
Utility
Pulsed Voltage Source for Plasma Processing Applications
14 Dec 23
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber.
A N M Wasekul AZAD, Kartik RAMASWAMY, Yang YANG, Yue GUO, Fernando SILVEIRA
Filed: 8 Jun 22
Utility
Patterning Layer Modification Using Directional Radical Ribbon Beam
14 Dec 23
Disclosed are approaches for forming semiconductor patterning features.
John Hautala
Filed: 10 Jun 22
Utility
Apparatus for Generating Etchants for Remote Plasma Processes
14 Dec 23
A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates.
Tae Seung CHO, David Michael BENJAMINSON, Kenneth SCHATZ, Ryan Michael PAKULSKI, Martin Yue CHOY, Pratheep GUNASEELAN, Chih-Yung HUANG
Filed: 21 Jul 22
Utility
Method of Forming Carbon-based Spacer for Euv Photoresist Patterns
14 Dec 23
Methods of depositing a conformal carbon-containing spacer layer are described.
Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Mark Saly
Filed: 14 Jun 22
Utility
Electrostatic Chuck Assembly for Cryogenic Applications
14 Dec 23
Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications.
Vijay D. PARKHE
Filed: 24 Aug 23
Utility
Plasma Preclean System for Cluster Tool
14 Dec 23
A plasma processing system for cleaning a substrate is provided.
Songjae LEE, Masato ISHII, Martin TRUEMPER, Richard O. COLLINS, Martin Jeffrey SALINAS, Yong ZHENG, Anita ZHAO, Adele MARIADASS, Christophe MARCADAL, Henry BARANDICA, Ernesto J. ULLOA
Filed: 9 Jun 22
Utility
Methods and Apparatus for Controlling Ion Fraction In Physical Vapor Deposition Processes
14 Dec 23
Methods and apparatus for processing substrates are disclosed.
Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
Filed: 25 Aug 23
Utility
Method and Apparatus for Etching a Semiconductor Substrate In a Plasma Etch Chamber
14 Dec 23
Methods and apparatus for etching a substrate in a plasma etch chamber are provided.
Daisuke SHIMIZU, Li LING, Hikaru WATANABE, Kenji TAKESHITA
Filed: 10 Jun 22
Utility
Methods for Patterning Substrates to Adjust Voltage Properties
14 Dec 23
A method of adjusting a threshold voltage in a field-effect-transistor (FET) device includes performing a deposition process to deposit a diffusion barrier layer over a gate dielectric layer in a first region, a second region, and a third region of a semiconductor structure, performing a first patterning process to remove a portion of the deposited diffusion layer in the first region, performing a second patterning process to partially remove a portion of the deposited diffusion barrier layer in the second region, performing a dipole layer deposition process to deposit a dipole layer over the gate dielectric layer in the first region, and the diffusion barrier layer in the second region and in the third region, and performing an annealing process to drive dipole dopants from the dipole layer into the gate dielectric layer.
Steven C. H. HUNG, Yixiong YANG, Tianyi HUANG, Srinivas GANDIKOTA
Filed: 16 May 23
Utility
Methods and Apparatus for Processing a Substrate
14 Dec 23
Methods and apparatus for processing a substrate are provided herein.
Gaurav SHRIVASTAVA, Pavankumar Ramanand HARAPANHALLI, Yao-Hung YANG, Sudhir R. GONDHALEKAR, Chih-Yang CHANG
Filed: 19 May 22
Utility
Auto Fine-tuner for Desired Temperature Profile
14 Dec 23
Embodiments disclosed herein include a method of setting a target profile.
Yi Wang, Wolfgang Aderhold
Filed: 8 Jun 22
Utility
Tab Arrangement for Retaining Support Elements of Substrate Support
14 Dec 23
Embodiments of substrate supports are provided herein.
Fred Eric RUHLAND, Pavankumar Ramanand HARAPANHALLI, Gaurav SHRIVASTAVA, Yao-Hung YANG
Filed: 13 Jun 22
Utility
System for Non Radial Temperature Control for Rotating Substrates
14 Dec 23
Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing.
Wolfgang R. ADERHOLD, Aaron Muir HUNTER, Joseph M. RANISH
Filed: 24 Aug 23
Design
Target profile for a physical vapor deposition chamber target
12 Dec 23
David Gunther, Kirankumar Neelasandra Savandaiah, Jiao Song, Madan Kumar Shimoga Mylarappa, Yue Cui, Nuno Yen-Chu Chen, Mengxue Wu
Filed: 7 May 21
Utility
Variable loop control feature
12 Dec 23
A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system.
Venkatanarayana Shankaramurthy, Anton Baryshnikov, Brett Berens, Mitesh Sanghvi, Shuang Liu
Filed: 16 Sep 22
Utility
Piezo position control flow ratio control
12 Dec 23
A method includes receiving, for a first pipe, first pressure values corresponding to first valve positions of a first valve coupled to the first pipe.
Ashley Okada, Ming Xu
Filed: 7 Oct 21